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晶體管-FET,MOSFET-單

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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-單
記錄 29,970
頁面 625/999
圖片
型號
制造商
描述
庫存
數量
系列
FET類型
技術
漏極至源極電壓(Vdss)
電流-25°C時的連續漏極(Id)
驅動電壓(Max Rds On,Min Rds On)
Rds On(Max)@ Id,Vgs
Vgs(th)(最大)@ ID
門電荷(Qg)(最大值)@ Vgs
Vgs(最大)
輸入電容(Ciss)(最大值)@ Vds
FET功能
功耗(最大值)
工作溫度
安裝類型
供應商設備包裝
包裝/箱
IRF737LCSTRL
Vishay Siliconix
MOSFET N-CH 300V 6.1A D2PAK
6,372
-
N-Channel
MOSFET (Metal Oxide)
300V
6.1A (Tc)
10V
750mOhm @ 3.7A, 10V
4V @ 250µA
17nC @ 10V
±30V
430pF @ 25V
-
-
-
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF737LCSTRR
Vishay Siliconix
MOSFET N-CH 300V 6.1A D2PAK
8,082
-
N-Channel
MOSFET (Metal Oxide)
300V
6.1A (Tc)
10V
750mOhm @ 3.7A, 10V
4V @ 250µA
17nC @ 10V
±30V
430pF @ 25V
-
-
-
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF7402TR
Infineon Technologies
MOSFET N-CH 20V 6.8A 8-SOIC
3,942
HEXFET®
N-Channel
MOSFET (Metal Oxide)
20V
6.8A (Ta)
2.7V, 4.5V
35mOhm @ 4.1A, 4.5V
700mV @ 250µA
22nC @ 4.5V
±12V
650pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF740ASTRL
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
7,362
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
36nC @ 10V
±30V
1030pF @ 25V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF740ASTRR
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
8,388
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
36nC @ 10V
±30V
1030pF @ 25V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF740LCL
Vishay Siliconix
MOSFET N-CH 400V 10A TO-262
2,448
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
-
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA
IRF740LC
Vishay Siliconix
MOSFET N-CH 400V 10A TO-220AB
4,842
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF740LCS
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
4,986
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF740LCSTRL
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
7,578
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF740LCSTRR
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
8,802
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF740L
Vishay Siliconix
MOSFET N-CH 400V 10A TO-220AB
7,830
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±20V
1100pF @ 25V
-
-
-
Through Hole
TO-220AB
TO-220-3
IRF740STRR
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
2,124
-
N-Channel
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
63nC @ 10V
±20V
1400pF @ 25V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF7413ATR
Infineon Technologies
MOSFET N-CH 30V 12A 8-SOIC
6,840
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
13.5mOhm @ 6.6A, 10V
1V @ 250µA
79nC @ 10V
±20V
1800pF @ 25V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7421D1TR
Infineon Technologies
MOSFET N-CH 30V 5.8A 8-SOIC
8,784
FETKY™
N-Channel
MOSFET (Metal Oxide)
30V
5.8A (Ta)
4.5V, 10V
35mOhm @ 4.1A, 10V
1V @ 250µA
27nC @ 10V
±20V
510pF @ 25V
Schottky Diode (Isolated)
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7422D2TR
Infineon Technologies
MOSFET P-CH 20V 4.3A 8-SOIC
8,424
FETKY™
P-Channel
MOSFET (Metal Oxide)
20V
4.3A (Ta)
2.7V, 4.5V
90mOhm @ 2.2A, 4.5V
700mV @ 250µA
22nC @ 4.5V
±12V
610pF @ 15V
Schottky Diode (Isolated)
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF744L
Vishay Siliconix
MOSFET N-CH 450V 8.8A TO-262
6,912
-
N-Channel
MOSFET (Metal Oxide)
450V
8.8A (Tc)
10V
630mOhm @ 5.3A, 10V
4V @ 250µA
80nC @ 10V
±20V
1400pF @ 25V
-
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA
IRF7452TR
Infineon Technologies
MOSFET N-CH 100V 4.5A 8-SOIC
4,950
HEXFET®
N-Channel
MOSFET (Metal Oxide)
100V
4.5A (Ta)
10V
60mOhm @ 2.7A, 10V
5.5V @ 250µA
50nC @ 10V
±30V
930pF @ 25V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7457TR
Infineon Technologies
MOSFET N-CH 20V 15A 8-SOIC
8,082
HEXFET®
N-Channel
MOSFET (Metal Oxide)
20V
15A (Ta)
4.5V, 10V
7mOhm @ 15A, 10V
3V @ 250µA
42nC @ 4.5V
±20V
3100pF @ 10V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7458TR
Infineon Technologies
MOSFET N-CH 30V 14A 8-SOIC
5,220
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
14A (Ta)
10V, 16V
8mOhm @ 14A, 16V
4V @ 250µA
59nC @ 10V
±30V
2410pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7459TR
Infineon Technologies
MOSFET N-CH 20V 12A 8-SOIC
3,114
HEXFET®
N-Channel
MOSFET (Metal Oxide)
20V
12A (Ta)
2.8V, 10V
9mOhm @ 12A, 10V
2V @ 250µA
35nC @ 4.5V
±12V
2480pF @ 10V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7460TR
Infineon Technologies
MOSFET N-CH 20V 12A 8-SOIC
7,650
HEXFET®
N-Channel
MOSFET (Metal Oxide)
20V
12A (Ta)
4.5V, 10V
10mOhm @ 12A, 10V
3V @ 250µA
19nC @ 4.5V
±20V
2050pF @ 10V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7463TR
Infineon Technologies
MOSFET N-CH 30V 14A 8-SOIC
3,924
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
14A (Ta)
2.7V, 10V
8mOhm @ 14A, 10V
2V @ 250µA
51nC @ 4.5V
±12V
3150pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7464TR
Infineon Technologies
MOSFET N-CH 200V 1.2A 8-SOIC
6,282
HEXFET®
N-Channel
MOSFET (Metal Oxide)
200V
1.2A (Ta)
10V
730mOhm @ 720mA, 10V
5.5V @ 250µA
14nC @ 10V
±30V
280pF @ 25V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7466TR
Infineon Technologies
MOSFET N-CH 30V 11A 8-SOIC
2,412
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
12.5mOhm @ 11A, 10V
3V @ 250µA
23nC @ 4.5V
±20V
2100pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7467TR
Infineon Technologies
MOSFET N-CH 30V 11A 8-SOIC
3,240
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
11A (Ta)
2.8V, 10V
12mOhm @ 11A, 10V
2V @ 250µA
32nC @ 4.5V
±12V
2530pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7468TR
Infineon Technologies
MOSFET N-CH 40V 9.4A 8-SOIC
6,840
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
9.4A (Ta)
4.5V, 10V
15.5mOhm @ 9.4A, 10V
2V @ 250µA
34nC @ 4.5V
±12V
2460pF @ 20V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D1TR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8-SOIC
2,286
FETKY™
N-Channel
MOSFET (Metal Oxide)
30V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17nC @ 5V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D2TR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8-SOIC
8,496
FETKY™
N-Channel
MOSFET (Metal Oxide)
30V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17nC @ 5V
±12V
-
Schottky Diode (Isolated)
2.5W (Tc)
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7809ATR
Infineon Technologies
MOSFET N-CH 30V 14.5A 8-SOIC
4,230
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
14.5A (Ta)
4.5V
8.5mOhm @ 15A, 4.5V
1V @ 250µA
75nC @ 5V
±12V
7300pF @ 16V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7809TR
Infineon Technologies
MOSFET N-CH 30V 17.6A 8-SOIC
8,208
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
17.6A (Ta)
4.5V
7.5mOhm @ 15A, 4.5V
1V @ 250µA
86nC @ 5V
±12V
7300pF @ 16V
-
3.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)