晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 622/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 55V 19A TO-262 |
4,896 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23 |
6,822 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 510pF @ 25V | - | 1.25W (Ta) | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 12V 5.5A 6-TSOP |
8,442 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 5.5A (Ta) | 2.5V, 4.5V | 42mOhm @ 5.5A, 4.5V | 600mV @ 250µA | 33nC @ 5V | ±12V | 1820pF @ 10V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A MICRO8 |
3,420 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | ±12V | 1066pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8 |
7,866 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 180pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK |
2,016 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3210pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
3,168 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
2,862 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO-262 |
6,678 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK |
8,946 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK |
3,294 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK |
7,596 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 42A D2PAK |
5,652 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK |
3,744 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK |
8,640 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK |
5,364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 82A D2PAK |
5,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK |
3,978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK |
4,086 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK |
3,168 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK |
2,988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
8,946 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
4,338 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
3,762 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
3,654 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
3,438 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
6,120 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB |
3,708 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK |
4,050 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK |
4,968 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |