晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 530/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,284 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | - | 220mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64nC @ 10V | - | 2300pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 800V 7A TO-220 |
6,192 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.44Ohm @ 3.5A, 10V | 5V @ 1mA | 32nC @ 10V | ±30V | 1890pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 1200V 1A TO-263 |
3,042 |
|
PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.6nC @ 10V | ±20V | 550pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 100A TO-220 |
4,212 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 80A, 10V | 3V @ 250µA | 450nC @ 10V | ±20V | 24740pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 300A D2PAK |
3,276 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 300A (Tc) | 10V | 1.4mOhm @ 39A, 10V | 4V @ 250µA | 243nC @ 10V | ±20V | 19250pF @ 30V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 120V 1A SAWN ON FOIL |
2,160 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 275µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
8,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Ta) | 10V | 270mOhm @ 9A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 2050pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
MOSFET N-CH 600V 13A TO220AB |
7,992 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 300mOhm @ 6.6A, 10V | 3.5V @ 440µA | 30nC @ 10V | ±20V | 1100pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 500V 16A TO-3P |
2,286 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
2,484 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
3,798 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 8PQFN |
3,618 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 8PQFN |
3,204 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
MOSFET N-CH 600V 6.5A TO220FP |
7,218 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 300mOhm @ 6.6A, 10V | 3.5V @ 440µA | 30nC @ 10V | ±20V | 1100pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
|
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|
IXYS |
MOSFET N-CH 100V 130A TO-220 |
3,472 |
|
GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | ±20V | 6600pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 29A TO247 |
4,752 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95nC @ 10V | ±20V | 2990pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 900V 9A TO247 |
5,634 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | ±30V | 2560pF @ 25V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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Infineon Technologies |
HIGH POWER_LEGACY |
7,614 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
8,622 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
8,658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±20V | 2656pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 19A TO-220SIS |
6,642 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 19A (Ta) | 10V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7 |
6,516 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
IXYS |
MOSFET N-CH 650V 12A TO-247 |
3,436 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 1100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
2,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 28A TO247 |
8,010 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 130mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | ±20V | 3590pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
5,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
MOSFET N-CH 800V 10A TO-263 |
6,072 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40nC @ 10V | ±30V | 2050pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
MOSFET N-CH 300V 44A TO-220 |
3,582 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 72A TO-220 |
3,240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |