晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 529/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A D2PAK |
7,308 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N CH 80V 120A TO-220 |
4,410 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133nC @ 10V | ±20V | 9450pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 160A D2PAK-7 |
7,812 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 80A, 10V | 3V @ 250µA | 167nC @ 10V | ±20V | 11600pF @ 25V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
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|
IXYS |
MOSFET N-CH 800V 10A TO-3P |
2,358 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40nC @ 10V | ±30V | 2050pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 55V 110A TO-263 |
4,788 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 13.5mOhm @ 500mA, 10V | 5.5V @ 250µA | 76nC @ 10V | ±20V | 2210pF @ 25V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 250V 42A TO-263 |
6,804 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 42A (Tc) | 10V | 84mOhm @ 500mA, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 150V 62A TO-263 |
7,002 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2250pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 75A TO-263 |
3,618 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 25mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | ±20V | 2250pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH TO263-3 |
3,564 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE |
8,946 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS |
3,870 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 25A I2PAK |
7,902 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 3352pF @ 100V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET NCH 24V 340A D2PAK |
8,424 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 340A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 0.2A TO-251 |
7,182 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 200mA (Tc) | 10V | 30Ohm @ 50mA, 0V | 5V @ 25µA | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 200V 50A TO-220 |
8,262 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 60mOhm @ 50A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 2720pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 47A SO8FL |
8,586 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO262 |
7,542 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
3,042 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,362 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 300A |
2,880 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 169nC @ 10V | ±20V | 10300pF @ 30V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2,286 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 99mOhm @ 5.9A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
8,766 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 16A D2-PAK |
4,374 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 14A D2-PAK |
4,626 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 2.5mA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 48A TO-247 |
3,598 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | - | - | - | - | - | - | - | 275W (Tc) | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 74A TO-247 |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 74A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 36A TO220 |
5,112 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 30nC @ 10V | ±20V | 2040pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 26A TO247-3 |
8,964 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-220SIS |
4,068 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 270mOhm @ 9A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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STMicroelectronics |
MOSFET N-CH 30V 20A POLARPAK |
8,550 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 7.8mOhm @ 10A, 10V | 2.5V @ 250µA | 13.4nC @ 4.5V | ±16V | 1380pF @ 25V | - | 5.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PolarPak® | PolarPak® |