晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 517/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 97A TO-247AC |
2,160 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13A TO-220SIS |
3,816 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 13A (Ta) | 10V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 40V 240A PSOF8 |
4,140 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.9mOhm @ 80A, 10V | 4V @ 250µA | 188nC @ 10V | ±20V | 12000pF @ 25V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5 |
8,028 |
|
TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | ±20V | 2660pF @ 25V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5-2 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
6,084 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 750MA TO-263 |
7,830 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 750mA (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 25µA | 8.5nC @ 10V | ±20V | 220pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 750MA TO-252AA |
2,394 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 750mA (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 25µA | 8.5nC @ 10V | ±20V | 220pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 1000V 1.4A TO-263 |
5,850 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8nC @ 10V | ±20V | 450pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO252 |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 850V 3.5A TO220 |
7,938 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 850V 8A TO220AB |
3,672 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 654pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 100V 140A TO220AB |
7,632 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 5mOhm @ 13A, 10V | 3.5V @ 250µA | 114nC @ 10V | ±20V | 3688pF @ 50V | - | 187W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
7,524 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 654pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH |
6,894 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11nC @ 10V | ±30V | 790pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH |
3,294 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 230A (Tc) | 10V | 2.9mOhm @ 115A, 10V | 4V @ 250µA | 140nC @ 10V | ±15V | 7400pF @ 25V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH |
5,886 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 4.5V @ 250µA | 11.8nC @ 10V | ±30V | 386pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3 |
2,988 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 272A |
4,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 500V 5A TO-220 |
8,874 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.65Ohm @ 2.5A, 10V | 5V @ 1mA | 6.9nC @ 10V | ±30V | 370pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Sanken |
MOSFET N-CH 200V 45A TO-263 |
2,250 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 45A (Ta) | 10V | 53mOhm @ 20A, 10V | 4.5V @ 1mA | - | ±30V | 2000pF @ 25V | - | 95W (Tc) | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK |
6,768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7437pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 650V 24A |
4,644 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43nC @ 10V | ±30V | 1985pF @ 400V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 202A TO-220AB |
2,412 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196nC @ 10V | ±20V | 5669pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 17A 8-SOIC |
4,392 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 500V 13.5A |
7,596 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 13.5A (Tc) | 10V | 480mOhm @ 6.75A, 10V | 4V @ 250µA | 56nC @ 10V | ±30V | 2055pF @ 25V | - | 218W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO-220 |
6,876 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1660pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 260A TO-220AB |
6,264 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V TO263-3 |
2,556 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 154µA | 123nC @ 10V | ±20V | 8970pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 3A SAWN ON FOIL |
3,598 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Tj) | 10V | 100mOhm @ 2A, 10V | 2.2V @ 196µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
7,290 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 3V, 8V | 2.4mOhm @ 25A, 8V | 1.4V @ 250µA | 19nC @ 4.5V | +10V, -8V | 3100pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |