晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 442/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 7A TO220 |
4,122 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 35A (Tc) | 10V | 18mOhm @ 30A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2400pF @ 30V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 8SOIC |
5,094 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11.2A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.3V @ 250µA | 30nC @ 10V | ±20V | 1460pF @ 25V | - | 3.7W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 40V 20A PPAK SO-8 |
5,400 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 56nC @ 10V | ±20V | 2400pF @ 20V | - | 4.2W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET P-CH 30V 7.2A 8DSO |
2,214 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | 2V @ 100µA | 54nC @ 10V | ±20V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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|
ON Semiconductor |
MOSFET N-CHANNEL 60V 17A 5DFN |
8,082 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 53µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Sanken |
MOSFET N-CH 60V 39A TO-220F |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 39A (Tc) | 4.5V, 10V | 8.8mOhm @ 28.5A, 10V | 2.5V @ 650µA | 38.6nC @ 10V | ±20V | 2520pF @ 25V | - | 38W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 75V 31A TO-220F |
2,700 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 31A (Tc) | 4.5V, 10V | 13.6mOhm @ 22.8A, 10V | 2.5V @ 650µA | 36.2nC @ 10V | ±20V | 2520pF @ 25V | - | 38W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 100V 23A TO-220F |
8,730 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 27.9mOhm @ 17.1A, 10V | 2.5V @ 650µA | 35.8nC @ 10V | ±20V | 2540pF @ 25V | - | 38W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
T6 40V DPAK EXPANSION AND |
3,114 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 73A (Tc) | 4.5V, 10V | 4.6mOhm @ 25A, 10V | 2.2V @ 60µA | 36nC @ 10V | ±20V | 2100pF @ 25V | - | 3W (Ta), 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 4.1A TO-220FP |
5,850 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.1A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 26.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 100V 34A D2PAK |
2,754 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 31mOhm @ 10A, 10V | 4V @ 1mA | 29.4nC @ 10V | ±20V | 1738pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 31A D2PAK |
5,274 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 5V, 10V | 36mOhm @ 10A, 10V | 2.1V @ 1mA | 22.8nC @ 5V | ±10V | 2681pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A DPAK-3 |
5,202 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40nC @ 10V | ±20V | 2700pF @ 10V | - | 63W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8SON |
8,118 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 200V 5A CPT3 |
8,298 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Ta) | 10V | 618mOhm @ 2.5A, 10V | 5.25V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 17A 71A 5DFN |
2,520 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 53µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Renesas Electronics America |
MOSFET N-CH 30V 8HVSON |
6,660 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 5.3mOhm @ 22A, 10V | - | 50nC @ 10V | ±20V | 2330pF @ 10V | - | 1.5W (Ta), 16W (Tc) | 150°C (TJ) | Surface Mount | - | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 3.3A TO251 |
2,610 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.3A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 7.7nC @ 10V | ±30V | 370pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 40V 8WDFN |
4,014 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 8WDFN |
8,118 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
4,284 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
2,772 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
5,652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A DPAK |
6,156 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO252-3 |
5,562 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
8,028 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 28µA | 26nC @ 10V | ±20V | 1750pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 14.9A TDSON-8 |
3,240 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 14.9A (Ta), 78.6A (Tc) | 6V, 10V | 8.4mOhm @ 50A, 10V | 3V @ 110µA | 57.7nC @ 10V | ±25V | 4240pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V SO-8 T&R |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 48A (Tc) | 4.5V, 10V | 9mOhm @ 10A, 10V | 3V @ 250µA | 40.2nC @ 10V | ±20V | 2309pF @ 50V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V SO-8 T&R |
4,122 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8DSO |
5,364 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 21mOhm @ 8.9A, 4.5V | 1.2V @ 100µA | 39nC @ 4.5V | ±12V | 3750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |