晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 440/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 30V POWERPAK SO-8 |
5,976 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Rohm Semiconductor |
MOSFET N-CH 30V 10A SOP8 |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 13.3mOhm @ 10A, 10V | 2.5V @ 1mA | 20nC @ 5V | ±20V | 1070pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 650V 2.8A TO-252 |
5,814 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 2.8A TO-252 |
5,022 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
2,376 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-263 |
2,700 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 900V 2.4A TO220F |
3,960 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.4A (Tc) | 10V | 6.7Ohm @ 1.5A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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|
|
Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
7,164 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | Super Junction | 20W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333 |
6,246 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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|
|
Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 47A 8DFN |
5,832 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 11.5mOhm @ 13A, 10V | 2.5V @ 250µA | 45nC @ 10V | ±20V | 2320pF @ 50V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-3 |
6,732 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.2mOhm @ 50A, 10V | 4V @ 33µA | 30nC @ 10V | ±20V | 1711pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 35A DPAK |
8,532 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Renesas Electronics America |
MOSFET P-CH 30V 17A 8HWSON |
7,380 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Tc) | 4.5V, 10V | 15.5mOhm @ 17A, 10V | - | 33.4nC @ 10V | +20V, -25V | 1160pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
CONSUMER |
6,642 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
T6 60V NCH LL IN U8FL |
7,380 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 25V 19A 8SON |
5,184 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | ±16V | 1230pF @ 12V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 800V 2A IPAK |
8,190 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6nC @ 10V | ±20V | 400pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Rohm Semiconductor |
MOSFET N-CH 30V 6.5A 8-SOIC |
6,444 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4V, 10V | 26mOhm @ 6.5A, 10V | 2.5V @ 1mA | 6.1nC @ 5V | ±20V | 430pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
3,456 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 400V 8A TO220 |
3,564 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 760pF @ 25V | - | 132W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
7,398 |
|
SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 6.2mOhm @ 10A, 10V | 2.5V @ 250µA | 36nC @ 10V | ±20V | 1360pF @ 15V | Schottky Diode (Body) | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Sanken |
MOSFET N-CH 60V 57A TO-220 |
5,544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 4.5V, 10V | 9.2mOhm @ 28.5A, 10V | 2.5V @ 650µA | 38.6nC @ 10V | ±20V | 2520pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Sanken |
MOSFET N-CH 75V 46A TO-220 |
2,520 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 46A (Tc) | 4.5V, 10V | 13.6mOhm @ 22.8A, 10V | 2.5V @ 650µA | 36.2nC @ 10V | ±20V | 2520pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Sanken |
MOSFET N-CH 100V 34A TO-220 |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 4.5V, 10V | 28.8mOhm @ 17.1A, 10V | 2.5V @ 650µA | 36.5nC @ 10V | ±20V | 2540pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 100V 10A |
7,686 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 42A (Tc) | 6V, 10V | 13.5mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 2W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
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Diodes Incorporated |
MOSFET N-CH 60V 11A POWERDI3333- |
2,034 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 34A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.08W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506 |
8,028 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 20.9A (Ta), 100A (Tc) | 10V | 3.7mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.6W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506 |
2,592 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 15.7A (Ta), 100A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 4V @ 250µA | 41.9nC @ 10V | ±20V | 2082pF @ 25V | - | 2.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
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Diodes Incorporated |
MOSFET N-CH 40V 95A DPAK |
4,410 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 4.5mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Diodes Incorporated |
MOSFET PCH 100V 1.7A SOT223 |
6,372 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 6V, 10V | 450mOhm @ 1.2A, 6V | 4V @ 250µA | 10.7nC @ 10V | ±20V | 424pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |