晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 435/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V SOT223 |
6,354 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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|
ON Semiconductor |
MOSFET N-CH 30V 71A U8FL |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 1683pF @ 15V | - | 3.1W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
TRANSISTOR N-CH |
4,518 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH 80V 9.5A PWDI3333-8 |
8,100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 9.5A (Ta), 35A (Tc) | 6V, 10V | 16mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 2.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 13A 8WDFN |
6,336 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 9.3mOhm @ 25A, 10V | 2V @ 250µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 3.1W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
T6 60V NCH LL IN U8FL |
6,156 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V TRENCH |
6,516 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
4,770 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
ON Semiconductor |
-20V -3.1A 95 O PCH ER T |
4,932 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.1A (Ta) | 2.5V, 4.5V | 95mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | ±12V | 720pF @ 10V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
|
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|
Sanken |
MOSFET N-CH 40V 80A TO-220 |
6,750 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 42.8A, 10V | 2.5V @ 650µA | 35.3nC @ 10V | ±20V | 2410pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 8TDSON |
6,300 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V-60V U-DFN2020- |
8,244 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 4.5V, 10V | 15mOhm @ 8.5A, 10V | 2.3V @ 250µA | 15nC @ 10V | ±20V | 1081pF @ 30V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
7,272 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
3,312 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
6,156 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | 2.1V @ 33µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
3,006 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 33µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
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|
Infineon Technologies |
MOSFET N-CH 25V 22A 2WDSON |
5,454 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 69A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2V @ 250µA | 25nC @ 10V | ±20V | 1862pF @ 12V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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|
ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
4,410 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 25A, 10V | 2V @ 35µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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|
Diodes Incorporated |
MOSFET P-CH 40V SOT223 |
8,172 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V POWERDI3333 |
4,230 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO252-3 |
4,500 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18nC @ 10V | ±20V | 513pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
7,848 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 3V @ 1mA | 68nC @ 10V | ±16V | 3944pF @ 25V | - | 3.2W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 40A 8-MLP |
4,842 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 16.5A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 17A, 10V | 1.8V @ 250µA | 12nC @ 4.5V | ±12V | 1228pF @ 13V | - | 2.4W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
2,646 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 2.8A (Ta) | 10V | 125mOhm @ 2.8A, 10V | 4V @ 520µA | 20.2nC @ 10V | ±20V | 790pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
|
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Vishay Siliconix |
MOSFET N-CH 30V 40A POWERPAK1212 |
7,236 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | 2.2V @ 1mA | 66nC @ 10V | +20V, -16V | 3014pF @ 15V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V POWERDI3333 |
2,916 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 18A 8SON |
5,508 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | ±16V | 1230pF @ 12V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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|
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL IPAK |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | - | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 17.5nC @ 10V | - | 1314pF @ 15V | - | - | - | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 5A 8-SOIC |
2,646 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 42mOhm @ 5A, 10V | 2.5V @ 1mA | 13nC @ 5V | ±20V | 1200pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 1A SOT223 |
4,338 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1A (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |