晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 432/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET P-CH 450V 4.7A TO252 |
6,282 |
|
- | P-Channel | MOSFET (Metal Oxide) | 450V | 4.7A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | 5V @ 250µA | 13.7nC @ 10V | ±30V | 564pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 13.5A POWER56 |
2,790 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 21A (Tc) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 2.5V @ 250µA | 33nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8SOP |
3,276 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 16mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 1100pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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Vishay Siliconix |
MOSFET N-CH 500V DPAK TO-252 |
5,958 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 8.8A 25A 5DFN |
7,506 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2V @ 16µA | 5nC @ 10V | ±20V | 410pF @ 25V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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|
Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
4,464 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
7,920 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH 60V 2.6A SOT223 |
8,946 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 10V | 170mOhm @ 750mA, 10V | 4V @ 1mA | 14.3nC @ 10V | ±20V | 492pF @ 25V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
|
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|
Diodes Incorporated |
MOSFET P-CH 100V 0.23A TO92-3 |
8,910 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 230mA (Ta) | 10V | 8Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 6A 8SOIC |
2,610 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Ta) | 4.5V, 10V | 37mOhm @ 6A, 10V | 2.7V @ 250µA | 44nC @ 10V | ±20V | 2000pF @ 50V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 500V 3.6A DPAK |
4,806 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | ±20V | 810pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 40V 50A TO252 |
4,770 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 10mOhm @ 50A, 10V | 4V @ 250µA | 25.5nC @ 10V | ±20V | 1405pF @ 20V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET P-CH 40V SOT223 |
2,304 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET NCH 100V 52.5A TO252 |
7,218 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 52.5A (Ta) | 6V, 10V | 15mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
|
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V SOT223 T& |
6,012 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 70V | 2.6A (Ta) | 4.5V, 10V | 160mOhm @ 2.1A, 10V | 1V @ 250µA | 18nC @ 10V | ±20V | 635pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 90A DPAK |
2,808 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 25A, 10V | 3V @ 250µA | 43nC @ 10V | ±16V | 2875pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 30V 19A |
6,768 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 42A (Tc) | 4.5V, 10V | 4mOhm @ 18A, 10V | 3V @ 1mA | 46nC @ 10V | ±20V | 2820pF @ 15V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
ST3 20V/8V PCH ERTREN |
2,142 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta), 18A (Tc) | 1.5V, 4.5V | 8mOhm @ 12A, 4.5V | 1V @ 250µA | 116nC @ 4.5V | ±8V | 7860pF @ 10V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V SOT223 T&R |
8,262 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 18.2A (Tc) | 4.5V, 10V | 28mOhm @ 5A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | 2569pF @ 30V | - | 2W (Ta), 17.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3 |
4,698 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 985pF @ 10V | - | 27W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
6,156 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 44.4nC @ 10V | ±20V | 3213pF @ 20V | - | 2.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
3,418 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 44.4nC @ 10V | ±20V | 3213pF @ 20V | - | 2.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 800V 1A IPAK |
8,892 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 5V @ 250µA | 7.2nC @ 10V | ±30V | 195pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET BVDSS: 101V-250V SOT223 T |
3,906 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 240V | 500mA (Ta) | 2.5V, 10V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
Alpha & Omega Semiconductor |
MOSFET P-CH 60V 26A TO251A |
3,852 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 4.5V, 10V | 40mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | ±20V | 3600pF @ 30V | - | 2.5W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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|
Vishay Siliconix |
MOSFET N-CHANNEL 30V 7.8A 6TSOP |
7,038 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.8A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 10nC @ 10V | ±20V | 370pF @ 15V | - | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 30A 136A 5DFN |
3,888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 136A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.1W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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|
Diodes Incorporated |
MOSFETP-CH 60VPOWERDI3333-8 |
7,974 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta), 18A (Tc) | 4.5V, 10V | 50mOhm @ 7A, 10V | 3V @ 250µA | 24.1nC @ 10V | ±20V | 1293pF @ 30V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAK1212 |
6,750 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.52mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | +20V, -16V | 3640pF @ 10V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
8,874 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 11.76A (Ta), 89.5A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |