內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 650/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 208CABGA |
8,496 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 9Mb (512K x 18) | Parallel | - | 12ns | 12ns | 2.4V ~ 2.6V | -40°C ~ 85°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 208CABGA |
2,100 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 9Mb (256K x 36) | Parallel | - | 12ns | 12ns | 2.4V ~ 2.6V | -40°C ~ 85°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
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Micron Technology Inc. |
IC FLASH 256G PARALLEL 100LBGA |
70 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (12x18) |
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Micron Technology Inc. |
IC FLASH 256G PARALLEL 100LBGA |
3,960 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (12x18) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 68PGA |
3,384 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
3,420 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
3,564 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
7,704 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
3,402 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
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|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
7,938 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (2M x 36) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 68PGA |
2,754 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (2K x 16) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 68PGA |
3,024 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (2K x 16) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
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Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
4,590 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (4M x 18) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 48LCC |
6,012 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Surface Mount | 48-LCC | 48-LCC (14.22x14.22) |
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
3,024 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 18Mb (512K x 36) | Parallel | - | 12ns | 12ns | 2.4V ~ 2.6V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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|
Micron Technology Inc. |
IC DRAM 32G PARALLEL 1.2GHZ |
2,772 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 32Gb (4G x 8) | Parallel | 1.2GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
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Micron Technology Inc. |
IC DRAM 32G PARALLEL 1.2GHZ |
5,220 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 32Gb (4G x 8) | Parallel | 1.2GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
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IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 48FPACK |
8,856 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Surface Mount | 48-FlatPack | 48-FPACK |
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Cypress Semiconductor |
IC SRAM 72M PARALLEL 361FCBGA |
5,922 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR IV | 72Mb (4M x 18) | Parallel | 600MHz | - | - | 1.1V ~ 1.3V | 0°C ~ 70°C (TA) | Surface Mount | 361-BBGA, FCBGA | 361-FCBGA (21x21) |
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Cypress Semiconductor |
IC SRAM 72M PARALLEL 361FCBGA |
4,356 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR IV | 72Mb (2M x 36) | Parallel | 600MHz | - | - | 1.1V ~ 1.3V | 0°C ~ 70°C (TA) | Surface Mount | 361-BBGA, FCBGA | 361-FCBGA (21x21) |
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IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 48LCC |
2,574 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Surface Mount | 48-LCC | 48-LCC (14.22x14.22) |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 84PGA |
3,186 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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Maxim Integrated |
IC NVSRAM 16M PARALLEL 36EDIP |
4,518 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 100ns | 100ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Through Hole | 36-DIP Module (0.600", 15.24mm) | 36-EDIP |
|
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IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
8,604 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 18Mb (512K x 36) | Parallel | - | 15ns | 15ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
101 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 18Mb (512K x 36) | Parallel | 133MHz | - | 4.2ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 324PBGA |
5,850 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 18Mb (256K x 72) | Parallel | 133MHz | - | 4.2ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 324-BGA | 324-PBGA (19x19) |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 84PGA |
3,654 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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|
IDT, Integrated Device Technology |
IC SRAM 128K PARALLEL 84PGA |
3,490 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
65 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 18Mb (512K x 36) | Parallel | 133MHz | - | 4.2ns | 2.4V ~ 2.6V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
3,063 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 18Mb (512K x 36) | Parallel | - | 10ns | 10ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |