內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 649/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
110 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (4M x 18) | Parallel | 366MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
|
|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
2,988 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (2M x 36) | Parallel | 366MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
Micron Technology Inc. |
IC DRAM 48G 2133MHZ FBGA |
5,778 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 48Gb (768M x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
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Micron Technology Inc. |
IC DRAM 48G 2133MHZ FBGA |
5,670 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 48Gb (768M x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
3,780 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 250ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
7,542 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
3,454 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
2,502 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
138 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 200ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
3,384 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 18Mb (512K x 36) | Parallel | 166MHz | - | 3.6ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
4,320 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 18Mb (512K x 36) | Parallel | - | 12ns | 12ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CPGA |
252 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-BCPGA | 28-CPGA (13.97x16.51) |
|
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|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
183 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (2M x 36) | Parallel | 400MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
119 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
8,154 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
7,848 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
3,474 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
|
|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
2,538 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (4M x 18) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
2,916 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (4M x 18) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
6,102 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (2M x 36) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
Cypress Semiconductor |
IC SRAM 72M PARALLEL 165FBGA |
7,704 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II+ | 72Mb (2M x 36) | Parallel | 450MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
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|
Maxim Integrated |
IC NVSRAM 16M PARALLEL 36EDIP |
3,618 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 70ns | 70ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole | 36-DIP Module (0.600", 15.24mm) | 36-EDIP |
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Maxim Integrated |
IC NVSRAM 16M PARALLEL 36EDIP |
8,424 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 100ns | 100ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole | 36-DIP Module (0.600", 15.24mm) | 36-EDIP |
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Maxim Integrated |
IC NVSRAM 16M PARALLEL 36EDIP |
4,194 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 70ns | 70ns | 4.75V ~ 5.25V | -40°C ~ 85°C (TA) | Through Hole | 36-DIP Module (0.600", 15.24mm) | 36-EDIP |
|
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|
Maxim Integrated |
IC NVSRAM 16M PARALLEL 36EDIP |
2,196 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 100ns | 100ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Through Hole | 36-DIP Module (0.600", 15.24mm) | 36-EDIP |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
5,094 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 18Mb (512K x 36) | Parallel | 133MHz | - | 4.2ns | 2.4V ~ 2.6V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 256CABGA |
6,084 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 18Mb (512K x 36) | Parallel | - | 10ns | 10ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
6,750 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
7,434 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 84PGA |
3,528 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |