內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 615/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
223 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
3,924 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 128K PARALLEL 68PGA |
7,830 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
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|
Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
7,272 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 167MHz | - | 3.4ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
3,006 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 200MHz | - | 3.2ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
Micron Technology Inc. |
IC DRAM 32G 1866MHZ |
3,726 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | 366-WFBGA (12x12.7) |
|
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|
Micron Technology Inc. |
IC DRAM 32G 1866MHZ |
3,135 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
|
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|
Micron Technology Inc. |
IC DRAM 32G 1866MHZ |
3,348 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
|
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|
Micron Technology Inc. |
IC DRAM LPDDR4 32G SMD |
4,320 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
7,470 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 6ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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|
Cypress Semiconductor |
IC NVSRAM 16M PARALLEL 54TSOP |
4,176 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
Cypress Semiconductor |
IC NVSRAM 16M PARALLEL 165FBGA |
6,912 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (512K x 32) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 128K PARALLEL 68PGA |
6,966 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
3,132 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 6ns | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
7,578 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 1.125Mb (32K x 36) | Parallel | - | 12ns | 12ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
4,644 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 1.125Mb (32K x 36) | Parallel | - | 12ns | 12ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
3,526 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
7,164 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
7,524 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
2,286 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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|
Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
6,066 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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Micron Technology Inc. |
IC DRAM 576M PARALLEL 168BGA |
8,100 |
|
- | Volatile | DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1067MHz | - | 8ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA (13.5x13.5) |
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Micron Technology Inc. |
IC DRAM 576M PARALLEL 168BGA |
7,416 |
|
- | Volatile | DRAM | DRAM | 576Mb (32M x 18) | Parallel | 1067MHz | - | 8ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA (13.5x13.5) |
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Micron Technology Inc. |
IC DRAM 576M PARALLEL 1067MHZ |
691 |
|
- | Volatile | DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1067MHz | - | 8ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA (13.5x13.5) |
|
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Cypress Semiconductor |
IC SRAM 36M PARALLEL 100TQFP |
6,511 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 36Mb (1M x 36) | Parallel | 250MHz | - | 2.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 100TQFP |
4,140 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (128K x 9) | Parallel | - | - | 7ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 100TQFP |
7,758 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (128K x 9) | Parallel | - | - | 9ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
7,002 |
|
- | Volatile | DRAM | DRAM | 576Mb (32M x 18) | Parallel | 800MHz | - | 12ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
6,660 |
|
- | Volatile | DRAM | DRAM | 576Mb (16M x 36) | Parallel | 800MHz | - | 12ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1M PARALLEL 100TQFP |
3,366 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 1Mb (128K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |