內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 595/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC SRAM 8M PARALLEL |
8,424 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
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|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
7,002 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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Micron Technology Inc. |
IC DRAM 16G 1600MHZ |
3,418 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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|
Micron Technology Inc. |
IC DRAM 16G 1866MHZ |
3,384 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1866MHz | - | - | 1.1V | -40°C ~ 85°C (TA) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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Maxim Integrated |
IC NVSRAM 1M PARALLEL 32EDIP |
3,490 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 100ns | 100ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
|
|
|
Everspin Technologies Inc. |
IC RAM 16M PARALLEL 48FBGA |
8,568 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 16Mb (2M x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (10x10) |
|
|
|
Micron Technology Inc. |
IC DRAM 16G PARALLEL 78FBGA |
4,176 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 16Gb (2G x 8) | Parallel | 1.2GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
4,824 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (512K x 36) | Parallel | 133MHz | - | 4.2ns | 2.375V ~ 2.625V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
4,806 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (512K x 36) | Parallel | 150MHz | - | 3.8ns | 2.375V ~ 2.625V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 128K PARALLEL 100TQFP |
3,384 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 25ns | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |
|
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|
Micron Technology Inc. |
IC FLASH 384G PARALLEL 333MHZ |
3,114 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 384Gb (48G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | 132-VBGA (12x18) |
|
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|
Micron Technology Inc. |
IC FLASH 384G PARALLEL 333MHZ |
3,366 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 384Gb (48G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | 132-VBGA (12x18) |
|
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|
Micron Technology Inc. |
IC DRAM 16G 1600MHZ FBGA |
8,568 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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|
Micron Technology Inc. |
IC DRAM 16G 1600MHZ |
2,754 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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|
Micron Technology Inc. |
IC DRAM 16G 1866MHZ |
5,147 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1866MHz | - | - | 1.1V | -40°C ~ 85°C (TA) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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|
Micron Technology Inc. |
IC DRAM 16G 1600MHZ FBGA |
2,982 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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Micron Technology Inc. |
IC DRAM 16G PARALLEL 1.2GHZ |
4,878 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 16Gb (2G x 8) | Parallel | 1.2GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
|
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|
Micron Technology Inc. |
IC FLASH 256G MMC |
3,057 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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|
Micron Technology Inc. |
IC FLASH 256G MMC |
5,688 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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Cypress Semiconductor |
IC FRAM 8MBIT 40MHZ 8GQFN |
7,758 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Cypress Semiconductor |
IC SRAM 16M PARALLEL |
8,280 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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IDT, Integrated Device Technology |
IC SRAM 36K PARALLEL 80TQFP |
2,430 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 36Kb (4K x 9) | Parallel | - | - | 12ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 80-LQFP | 80-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
8,028 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | 200MHz | - | 3.2ns | 2.375V ~ 2.625V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 119PBGA |
6,732 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | 166MHz | - | 3.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
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IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 119PBGA |
3,186 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | 166MHz | - | 3.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 128TQFP |
3,276 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 256Kb (16K x 16) | Parallel | - | - | 12ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
|
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|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 78FBGA |
4,932 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (2G x 4) | Parallel | 933MHz | - | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x10.5) |
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|
Micron Technology Inc. |
IC SDRAM DDR3 8GB 78FBGA |
7,002 |
|
TwinDie™ | Volatile | DRAM | SDRAM - DDR3L | 8Gb (2G x 4) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x10.5) |
|
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|
Maxim Integrated |
IC NVSRAM 1M PARALLEL 32EDIP |
5,094 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 120ns | 120ns | 4.75V ~ 5.25V | -40°C ~ 85°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
8,496 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | - | - | 7.5ns | 2.375V ~ 2.625V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |