內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 592/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC FLASH NAND 512G TLC |
4,482 |
|
- | Non-Volatile | FLASH | FLASH - NAND (TLC) | 512Gb (64G x 8) | - | - | - | - | - | 0°C ~ 70°C | Surface Mount | - | - |
|
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|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
4,050 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | 200MHz | - | 3.2ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
Micron Technology Inc. |
IC FLASH 256G PARALLEL 200MHZ |
8,010 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | Parallel | 200MHz | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | 132-VBGA (12x18) |
|
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
4,824 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 2.133GHz | - | - | 0.6V, 1.1V | -40°C ~ 95°C | Surface Mount | - | - |
|
|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
4,184 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
237 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 68PLCC |
8,658 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 300MHZ |
5,508 |
|
- | Volatile | DRAM | DRAM | 288Mb (16M x 18) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 300MHZ |
4,446 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 300MHZ |
8,748 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |
|
|
|
Micron Technology Inc. |
IC FLASH 128G MMC 169TFBGA |
1,240 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 169-TFBGA | 169-TFBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 128G MMC 169TFBGA |
4,860 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 169-TFBGA | 169-TFBGA (14x18) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 128K PARALLEL 100TQFP |
1,760 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |
|
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
3,721 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 2.133GHz | - | - | 0.6V, 1.1V | -40°C ~ 95°C | Surface Mount | - | - |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 100TQFP |
4,302 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |
|
|
|
Cypress Semiconductor |
IC NVSRAM 4M PARALLEL 48FBGA |
8,406 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (6x10) |
|
|
|
Micron Technology Inc. |
IC FLASH NAND 512G TLC |
8,604 |
|
- | Non-Volatile | FLASH | FLASH - NAND (TLC) | 512Gb (64G x 8) | - | - | - | - | - | 0°C ~ 70°C | Surface Mount | - | - |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 100TQFP |
5,040 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 256Kb (32K x 8) | Parallel | - | - | 7.5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 72K PARALLEL 68PLCC |
3,168 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 72Kb (8K x 9) | Parallel | - | 12ns | 12ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
|
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|
Cypress Semiconductor |
IC FRAM 8MBIT 20MHZ 8GQFN |
5,616 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Cypress Semiconductor |
IC FRAM 8MBIT 20MHZ 8GQFN |
5,436 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Cypress Semiconductor |
IC NVSRAM 16M PARALLEL |
2,177 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (1M x 16) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 60-LFBGA | 60-FBGA (10x18) |
|
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|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144FBGA |
4,140 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 400MHz | - | 15ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-FBGA (18.5x11) |
|
|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
8,064 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
6,444 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
356 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
6,804 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | - | - | 7.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 400MHZ |
4,536 |
|
- | Volatile | DRAM | DRAM | 288Mb (16M x 18) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 400MHZ |
4,950 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 400MHZ |
5,598 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 144-TBGA | 144-TWBGA (11x18.5) |