Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 7/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 60V 48A TO-220AB |
22,428 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
47,886 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.45mOhm @ 50A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4000pF @ 20V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
40,146 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 31A (Ta), 100A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95nC @ 10V | ±20V | 6500pF @ 30V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 13.4A DIRECTFET |
32,772 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1350pF @ 25V | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
495,714 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 14.9A (Ta), 90A (Tc) | 6V, 10V | 6mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4900pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 23A 8TDSON |
205,344 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.6mOhm @ 50A, 10V | 3.8V @ 115µA | 92nC @ 10V | ±20V | 6800pF @ 40V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3 |
20,316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7 |
18,726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 100V 13A 8PQFN |
33,180 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | ±16V | 5185pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 19A VSON-4 |
56,532 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 185mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 81W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8-PQFN |
29,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | 4730pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-220AB |
90,528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8 |
211,200 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 2.8V @ 120µA | 89nC @ 10V | ±20V | 6500pF @ 30V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-17 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
15,174 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
35,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 37A 8TDSON |
75,372 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.05mOhm @ 50A, 10V | 2V @ 250µA | 87nC @ 10V | ±20V | 6200pF @ 20V | Schottky Diode (Body) | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 120A TO263-3 |
81,570 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
246,678 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK |
20,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
44,664 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 3.3V @ 120µA | 104nC @ 10V | ±20V | 8125pF @ 30V | - | 3W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO263-3 |
20,436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
62,394 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 40V 180A TO263-7 |
53,640 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286nC @ 10V | ±16V | 18700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7-3 |
30,834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | ±20V | 14000pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 33A IPAK |
72,432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK |
21,576 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 160A TO263-7 |
14,670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 160A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO-263 |
14,400 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | ±20V | 5033pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7 |
20,184 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 250µA | 227nC @ 10V | ±20V | 25000pF @ 15V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
15,834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |