Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 5/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 200V 2.5A 8-SOIC |
33,186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | ±30V | 940pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 39A TDSON-8 |
39,180 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 30A, 10V | 2V @ 250µA | 64nC @ 10V | ±20V | 4700pF @ 12V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252 |
86,472 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 18A 8-SOIC |
162,882 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta) | 4.5V, 10V | 5mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | ±20V | 4500pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC |
103,296 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 15mOhm @ 10.5A, 10V | 3V @ 250µA | 110nC @ 10V | ±20V | 9250pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 12A 8SOIC |
26,616 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88nC @ 4.5V | ±12V | 9600pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 19A 8TSDSON |
103,566 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 40A (Tc) | 6V, 10V | 4.2mOhm @ 20A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 45A PQFN |
34,656 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | ±20V | 7174pF @ 13V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 150V 33A DPAK |
260,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO252-3 |
19,698 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.2mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 33A 8TDSON |
76,044 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 8V, 10V | 36mOhm @ 25A, 10V | 4V @ 45µA | 15nC @ 10V | ±20V | 1190pF @ 75V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
1,353,384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 49µA | 85nC @ 10V | ±20V | 6800pF @ 20V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 40V 100A PQFN 5X6 |
91,956 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | ±20V | 6419pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 60V 50A DPAK |
215,724 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 38A TDSON-8 |
269,370 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1.05mOhm @ 30A, 10V | 2V @ 250µA | 59nC @ 10V | ±20V | 4200pF @ 12V | - | 2.5W (Ta), 96W (Tc) | - | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 23A 6-PQFN |
77,508 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 3.2mOhm @ 75A, 10V | 3.7V @ 150µA | 165nC @ 10V | ±20V | 6460pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 250V 10.9A 8TSDSON |
44,184 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V 10.9A 8TDSON |
53,670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
76,548 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 37A TDSON-8 |
324,768 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 68nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK |
90,492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 6A 3TO252 |
196,704 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO252 |
298,596 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252-3 |
25,362 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 41A TDSON-8 |
76,548 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 126nC @ 10V | ±20V | 5800pF @ 12V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET |
86,340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2120pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 150V 90A DIRECTFET |
33,330 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.4A (Ta), 18A (Tc) | 10V | 56mOhm @ 11A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1360pF @ 25V | - | 2.7W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M2 | DirectFET™ Isometric M2 |
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Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK |
37,152 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
313,242 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK |
16,266 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1450pF @ 25V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |