Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單

系列

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FET類型

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技術

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漏極至源極電壓（Vdss）

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電流-25°C時的連續漏極（Id）

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驅動電壓（Max Rds On，Min Rds On）

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Rds On（Max）@ Id，Vgs

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Vgs（th）（最大）@ ID

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門電荷（Qg）（最大值）@ Vgs

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Vgs（最大）

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輸入電容（Ciss）（最大值）@ Vds

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FET功能

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功耗（最大值）

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工作溫度

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安裝類型

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供應商設備包裝

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包裝/箱

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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單

制造商Toshiba Semiconductor and Storage

記錄 786

頁面 26/27

型號	制造商	描述	庫存	系列	FET類型	技術	漏極至源極電壓（Vdss）	電流-25°C時的連續漏極（Id）	驅動電壓（Max Rds On，Min Rds On）	Rds On（Max）@ Id，Vgs	Vgs（th）（最大）@ ID	門電荷（Qg）（最大值）@ Vgs	Vgs（最大）	輸入電容（Ciss）（最大值）@ Vds	FET功能	功耗（最大值）	工作溫度	安裝類型	供應商設備包裝	包裝/箱
SSM3K7002BF,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.2A S-MINI	6,444	U-MOSIV	N-Channel	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	2.1Ohm @ 500mA, 10V	-	-	±20V	17pF @ 25V	-	200mW (Ta)	150°C (TJ)	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
TK12V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A 5DFN	4,374	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25nC @ 10V	±30V	890pF @ 300V	Super Junction	104W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK16V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A 5DFN	4,644	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38nC @ 10V	±30V	1350pF @ 300V	Super Junction	139W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK46A08N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 46A TO-220	3,582	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	80V	46A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37nC @ 10V	±20V	2500pF @ 40V	-	35W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8	5,004	U-MOSVI	P-Channel	MOSFET (Metal Oxide)	30V	6A (Ta)	4.5V, 10V	28mOhm @ 3A, 10V	2V @ 100µA	22nC @ 10V	+20V, -25V	970pF @ 10V	-	700mW (Ta)	150°C (TJ)	Surface Mount	VS-8 (2.9x1.5)	8-SMD, Flat Lead
TK17E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17.3A TO-220AB	8,064	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	3.5V @ 900µA	45nC @ 10V	±30V	1800pF @ 300V	-	165W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK16E60W5,S1VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15.8A TO-220AB	3,436	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43nC @ 10V	±30V	1350pF @ 300V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
SSM3K17SU,LF(D	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 100MA USM	6,336	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ438(AISIN,A,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH	8,640	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(AISIN,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH	7,974	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(CANO,A,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH	8,622	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(CANO,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH	4,644	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,MDKQ(J	Toshiba Semiconductor and Storage	MOSFET P-CH	3,024	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,MDKQ(M	Toshiba Semiconductor and Storage	MOSFET P-CH	4,824	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,Q(J	Toshiba Semiconductor and Storage	MOSFET P-CH	5,364	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,Q(M	Toshiba Semiconductor and Storage	MOSFET P-CH	6,264	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SK2962(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH	4,950	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962(T6CANO,F,M	Toshiba Semiconductor and Storage	MOSFET N-CH	3,096	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962(TE6,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	2,412	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	7,650	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	6,660	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6F(M	Toshiba Semiconductor and Storage	MOSFET N-CH	5,670	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(J	Toshiba Semiconductor and Storage	MOSFET N-CH	6,948	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(M	Toshiba Semiconductor and Storage	MOSFET N-CH	5,778	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH	2,862	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,F,M	Toshiba Semiconductor and Storage	MOSFET N-CH	5,688	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(TPE6,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	8,838	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989,F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	4,986	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989,T6F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	5,076	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK3670(F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	5,796	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body

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