晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 752/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 560V 11.6A TO-263 |
2,466 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO-263 |
5,058 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20A TO-263 |
5,292 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | ±20V | 3000pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO-263 |
7,398 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 0.8A TO-252 |
8,928 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5nC @ 10V | ±20V | 100pF @ 25V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-252 |
6,804 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 2A TO-252 |
4,086 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-252 |
5,310 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | ±20V | 420pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-252 |
8,460 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | ±20V | 580pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-252 |
3,978 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 26nC @ 10V | ±20V | 570pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 6.2A TO-252 |
8,514 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31nC @ 10V | ±20V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO-252 |
3,528 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5nC @ 10V | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-252 |
5,202 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 860pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 24V 429A D2PAK-7 |
5,868 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | ±20V | 7700pF @ 19V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 78A TO-247AC |
5,184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 78A (Tc) | 10V | 15.5mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 310W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET |
7,092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1360pF @ 10V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 25V 15A DIRECTFET |
4,806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | 2.35V @ 25µA | 17nC @ 4.5V | ±20V | 1450pF @ 13V | - | 2.2W (Ta), 34W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 200V 4.6A DIRECTFET |
8,676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | ±20V | 2290pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-262 |
8,874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-262 |
3,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-262 |
2,988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
7,200 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
5,364 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
3,492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
2,988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 32A TO-263AB |
4,698 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 6V, 10V | 27mOhm @ 16A, 10V | 4V @ 250µA | 33nC @ 10V | ±20V | 1120pF @ 25V | - | 58W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 12V 11A SSOT-8 |
6,552 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 1.8V, 4.5V | 9mOhm @ 11A, 4.5V | 1.5V @ 250µA | 80nC @ 4.5V | ±8V | 5350pF @ 6V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-8 | 8-LSOP (0.130", 3.30mm Width) |
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ON Semiconductor |
MOSFET N-CH 900V 1.7A DPAK |
3,780 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 80A D2PAK |
4,320 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 80A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | ±20V | 12200pF @ 25V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 6.5A DPAK |
7,650 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 6.5A (Ta), 2.7A (Tc) | 4.5V, 10V | 40mOhm @ 2.7A, 10V | 2.5V @ 250µA | 9nC @ 10V | ±20V | 425pF @ 13V | - | 3.7W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |