晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 643/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP |
3,852 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38nC @ 4.5V | ±20V | 3150pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-TSSOP |
6,930 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88nC @ 10V | ±20V | 2774pF @ 25V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 7A 8-TSSOP |
5,886 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 22mOhm @ 7A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 2211pF @ 25V | - | 1.51W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8-TSSOP |
2,250 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | 2361pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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|
Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8 |
8,622 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | ±20V | 2204pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
3,204 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
4,986 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,686 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 4.5V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
6,966 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 4.5V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,560 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14nC @ 4.5V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
4,500 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | ±20V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 10.8A 8-SOIC |
7,344 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10.8A (Ta) | 4.5V | 14mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | ±20V | 1801pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6,498 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | 1V @ 250µA | 33nC @ 5V | ±12V | 2335pF @ 16V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC |
8,478 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V | 6.5mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | ±12V | 5500pF @ 16V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC |
4,068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V | 6.5mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | ±12V | 5500pF @ 16V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 4.1A TO220FP |
2,160 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.1A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 50V TO-220FP |
7,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
8,388 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
4,626 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
8,694 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
3,780 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
2,682 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
4,248 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
5,922 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
7,686 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
2,556 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
6,336 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
4,770 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
3,618 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
7,200 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |