晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 608/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 30V 15A 8-SOIC |
4,104 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | ±12V | 3480pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6,912 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51nC @ 4.5V | ±12V | 3150pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.2A MICRO8 |
4,050 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | ±12V | 2520pF @ 10V | - | 1.8W (Ta) | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,110 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,704 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Tc) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
2,700 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
6,984 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.6A 8-SOIC |
8,064 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V | 7.5mOhm @ 15A, 4.5V | 1V @ 250µA | 86nC @ 5V | ±12V | 7300pF @ 16V | - | 3.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14.5A 8-SOIC |
8,856 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V | 8.5mOhm @ 15A, 4.5V | 1V @ 250µA | 75nC @ 5V | ±12V | 7300pF @ 16V | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 14A 8-SOIC |
4,734 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 14A (Ta) | 4.5V | 11mOhm @ 15A, 4.5V | 1V @ 250µA | 23nC @ 5V | ±12V | 1800pF @ 16V | - | 3.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC |
7,452 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | ±12V | 1760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC |
8,784 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | ±12V | 1760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 500V 5A D2PAK |
8,892 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
2,178 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
3,726 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
7,416 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC |
3,544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 100V 4A D2PAK |
8,856 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A D2PAK |
6,984 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
2,100 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
8,766 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK |
8,874 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
5,688 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
5,652 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK |
4,410 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK |
5,760 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
8,514 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
4,626 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
5,274 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
3,418 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |