晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 601/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET P-CH 50V 130MA SOT23-3 |
6,318 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | ±20V | 40pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 21A TO-247AC |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
4,644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-220AB |
2,088 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
4,230 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB |
3,400 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
5,148 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
7,290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Diodes Incorporated |
MOSFET P-CH 200V 0.12A TO92-3 |
7,218 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 10V | 25Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 50V 175MA TO92-3 |
2,178 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 175mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 4.6A TO220FP |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
3,006 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
6,714 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 2.5A 8-SOIC |
3,474 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Tc) | 4.5V, 10V | 250mOhm @ 1A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 270pF @ 20V | - | 1.6W (Ta), 2.5W (Tc) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC |
3,186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 180mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC |
5,814 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 11A TO-247AC |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
8,388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4500pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8.8A TO-247AC |
7,452 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.8A (Tc) | 10V | 850mOhm @ 5.3A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
6,138 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2700pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-247AC |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 800V 7.8A TO-247AC |
4,626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.8A (Tc) | 10V | 1.2Ohm @ 4.7A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 3100pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-247AC |
8,604 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO-247AC |
6,894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 980pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 6.1A TO-247AC |
2,106 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6.1A (Tc) | 10V | 2Ohm @ 3.6A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 2800pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 12A TO-247AC |
3,150 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 500mOhm @ 7.2A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |