晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 557/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 200V 72A TO-268 |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 33mOhm @ 500mA, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4400pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 23A TO-268(D3) |
8,802 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 90nC @ 10V | ±30V | 3300pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 600V 46A TO-247 |
2,736 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 83mOhm @ 29A, 10V | 5V @ 2.9mA | 322nC @ 10V | ±20V | 7700pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 14A TO-247 |
7,650 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 700mOhm @ 500mA, 10V | 4.5V @ 250µA | 170nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,434 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Microsemi |
MOSFET N-CH 600V 36A TO-247 |
6,552 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 75A TO-264 |
7,776 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 75A (Tc) | 10V | 42mOhm @ 500mA, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6000pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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|
IXYS |
MOSFET N-CH 550V 36A TO-247 |
6,264 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 550V | 36A (Tc) | 10V | 160mOhm @ 500mA, 10V | 4.5V @ 4mA | 128nC @ 10V | ±30V | 4500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 40A TO-247 |
7,308 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320nC @ 10V | ±20V | 10400pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 45A T-MAX |
4,698 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 200V 88A TO-264 |
6,750 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | ±30V | 4150pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 50A ISOPLUS247 |
3,060 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 1700V 1A TO-263 |
8,406 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1700V | 1A (Tc) | 10V | 16Ohm @ 500mA, 0V | - | 47nC @ 5V | ±20V | 3090pF @ 25V | Depletion Mode | 290W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 35A ISOPLUS247 |
5,796 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 95mOhm @ 32A, 10V | 5.5V @ 8mA | 150nC @ 10V | ±30V | 8700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 32A ISOPLUS247 |
3,042 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 150mOhm @ 24A, 10V | 5V @ 8mA | 150nC @ 10V | ±30V | 8860pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE TO-3PF |
7,002 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Ta) | 10V | 81mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | ±30V | 6000pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 28A TO-268(D3) |
6,894 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4.5V @ 4mA | 94nC @ 10V | ±30V | 3000pF @ 25V | - | 375W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 10A TO-268 |
6,606 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.2Ohm @ 5A, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 45A TO-264 |
4,014 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V ISOPLUS247 |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 1000V 10A TO-268 |
3,582 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.4Ohm @ 10A, 10V | 3.5V @ 250µA | 130nC @ 10V | ±30V | 2500pF @ 25V | Depletion Mode | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 30A TO-247 |
8,118 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 170mOhm @ 500mA, 10V | 4V @ 250µA | 227nC @ 10V | ±20V | 5680pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1700V 2A TO-247 |
2,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1700V | 2A (Tj) | 0V | 6.5Ohm @ 1A, 0V | - | 110nC @ 5V | ±20V | 3650pF @ 10V | Depletion Mode | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 102A X2 TO-264 |
4,518 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 36A ISOPLUS247 |
5,958 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 105mOhm @ 32A, 10V | 5V @ 8mA | 200nC @ 10V | ±30V | 12000pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 48A ISOPLUS247 |
7,110 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 76mOhm @ 40A, 10V | 5V @ 8mA | 190nC @ 10V | ±30V | 13100pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 140A TO-268 |
3,888 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 400nC @ 10V | ±15V | 31400pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 200V 68A TO-268 |
8,172 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 68A (Tc) | 10V | 55mOhm @ 34A, 10V | 4V @ 250µA | 380nC @ 10V | ±15V | 33400pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 56A TO-264 |
3,204 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 420A PLUS247 |
2,358 |
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GigaMOS™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 420A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | ±20V | 47000pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |