晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 537/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 900V TO-220 |
6,336 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 80V 166A POWER56 |
7,038 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 166A (Tc) | 6V, 10V | 2.7mOhm @ 68A, 10V | 4V @ 380µA | 84nC @ 10V | ±20V | 6240pF @ 40V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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|
IXYS |
120V/140A TRENCHT2 POWER MOSFET |
3,330 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 120V | 140A (Tc) | 10V | 10mOhm @ 70A, 10V | 4.5V @ 250µA | 174nC @ 10V | ±20V | 9700pF @ 25V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK |
6,552 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.4mOhm @ 195A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9450pF @ 32V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Wide | TO-262-3 Wide Leads |
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IXYS |
MOSFET P-CH 200V 16A TO-247 |
4,536 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 160mOhm @ 500mA, 10V | 5V @ 250µA | 95nC @ 10V | ±20V | 2800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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|
IXYS |
MOSFET P-CH 100V 36A TO-247 |
7,560 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 75mOhm @ 18A, 10V | 5V @ 250µA | 95nC @ 10V | ±20V | 2800pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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|
IXYS |
MOSFET N-CH 150V 102A TO-220 |
5,292 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87nC @ 10V | ±20V | 5220pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 100V 180A TO-220 |
3,402 |
|
GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH TO-220 |
6,606 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 420mOhm @ 9A, 10V | 5.5V @ 250µA | 49nC @ 10V | ±30V | 2500pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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|
IXYS |
MOSFET N-CH 300V 54A TO-3P |
6,138 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
IXYS |
MOSFET N-CH 250V 76A TO-3P |
3,672 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 4500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 86A TO-3P |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 4500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
ON Semiconductor |
FET ENGR DEV-NOT REL |
7,884 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 128A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 310µA | 68nC @ 10V | ±20V | 5065pF @ 50V | - | 2.4W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 1200V 3A TO-263 |
5,544 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V TO-3PN |
4,122 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3nC @ 10V | ±30V | 2170pF @ 100V | - | 134.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V TO-220AB |
3,960 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET P-CH 150V 44A TO-220 |
8,874 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 44A (Tc) | 10V | 65mOhm @ 500mA, 10V | 4V @ 250µA | 175nC @ 10V | ±15V | 13400pF @ 25V | - | 298W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 65V 120A TO-220 |
7,056 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 65V | 120A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 250µA | 185nC @ 10V | ±15V | 13200pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 75V 230A TO-220 |
4,212 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178nC @ 10V | ±20V | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 260A TO-220 |
8,946 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 260A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 10800pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-247 |
2,880 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 270mOhm @ 12A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2890pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 18A TO-247 |
5,598 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 400mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 50nC @ 10V | ±30V | 2500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
Infineon Technologies |
TRANSISTOR N-CH |
6,732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
IXYS |
MOSFET N-CH 600V 24A TO-263 |
2,016 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47nC @ 10V | ±30V | 1910pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
8,010 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 2060pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
4,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2300pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
7,164 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3900pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220 |
6,552 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MV POWER MOS |
5,868 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 100V 222A TO220-3 |
4,968 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 222A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V | 11180pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |