晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 524/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
MOSFET N-CH 40V 352A SO8FL |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 250V 25.5A 131M |
8,460 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 250V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49nC @ 10V | ±30V | 1800pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
AFSM T6 60V SG NCH |
4,968 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 60.5A (Ta), 464A (Tc) | 10V | 0.72mOhm @ 50A, 10V | 4V @ 250µA | 152nC @ 10V | ±20V | 11535pF @ 30V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
|
|
|
IXYS |
MOSFET N-CH 65V 130A TO-220 |
3,348 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 65V | 130A (Tc) | 10V | 6.6mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | ±20V | 4800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 850V 3.5A TO263 |
4,896 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,200 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
6,966 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 21A TO-262 |
2,538 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
2,286 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | ±20V | 10250pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V TO220 |
7,776 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114nC @ 10V | ±20V | 3465pF @ 380V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 13A TO-220SIS |
6,822 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Ta) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 14A TO-220SIS |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 14A | - | 340mOhm @ 7A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
IXYS |
MOSFET N-CH 75V 90A TO-263 |
7,524 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 3290pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 5V | 77mOhm @ 10A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
IXYS |
MOSFET N-CH 500V 12A D2-PAK |
3,454 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
MOSFET N-CH 75V 170A TO-220 |
4,824 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 5.4mOhm @ 50A, 10V | 4V @ 250µA | 109nC @ 10V | ±20V | 6860pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 40V 220A TO-220 |
6,210 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 220A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6820pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 75V 120A TO-220 |
8,622 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 7.7mOhm @ 60A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 4740pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 40V 160A TO-220 |
7,596 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 5mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | ±20V | 4640pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Ta) | 10V | 270mOhm @ 8A, 10V | 4.5V @ 1mA | 50nC @ 10V | ±30V | 1800pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
MOSFET N-CH 650V 12A TO-263 |
2,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 1100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab) Variant |
|
|
|
IXYS |
MOSFET N-CH 850V 3.5A TO252 |
2,934 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (IXFY) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
6,048 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 21A TO263 |
4,590 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO220-FP |
7,884 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | ±20V | 1820pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 650V 22A TO-220FK |
2,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 75V 80A TO-220AB-3 |
6,912 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | - | 6V, 10V | - | - | - | ±20V | - | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
HIGH POWER_LEGACY |
3,924 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
|
|
|
ON Semiconductor |
T6 60V S08FL SINGLE |
3,474 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2V @ 25µA | 9.7nC @ 10V | ±20V | 620pF @ 25V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Infineon Technologies |
MOSFET COOL MOS SAWED WAFER |
8,388 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |