晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 512/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
6,300 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
8,316 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3 |
3,654 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH TO220-3 |
5,544 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 108µA | 87nC @ 10V | ±20V | 6240pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
4,770 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 191A SO8FL |
4,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 191A (Tc) | - | 1.9mOhm @ 30A, 10V | 2.5V @ 250µA | 150nC @ 11.5V | - | 7500pF @ 12V | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 22A TO220 |
6,480 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55nC @ 10V | ±20V | 2860pF @ 380V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A 10-POLARPAK |
6,390 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 23.6A, 10V | 2.7V @ 250µA | 160nC @ 10V | ±20V | 7000pF @ 15V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
|
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Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK |
2,898 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 23.6A, 10V | 2.7V @ 250µA | 160nC @ 10V | ±20V | 7000pF @ 15V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
|
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|
Sanken |
MOSFET N-CH 200V 45A TO-220F |
8,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 45A (Ta) | 10V | 53mOhm @ 22A, 10V | 4.5V @ 1mA | - | ±30V | 2000pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
8,604 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | ±20V | 9600pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 1000V 0.75A TO-220 |
4,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 750mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 152A TO262 |
2,880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 136nC @ 10V | ±20V | 6460pF @ 75V | - | 2.1W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO262-3 |
7,110 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 1A SAWN ON FOIL |
6,102 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 150µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 21.5A TO263 |
6,732 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.4mOhm @ 20A, 10V | 3.3V @ 250µA | 206nC @ 10V | ±20V | 10830pF @ 37.5V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK |
8,226 |
|
Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 2000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3 |
8,802 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 200µA | 300nC @ 10V | ±16V | 23000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 20.5A TO263 |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 20.5A (Ta), 140A (Tc) | 6V, 10V | 2.2mOhm @ 20A, 10V | 3.4V @ 250µA | 224nC @ 10V | ±20V | 11135pF @ 40V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO-220SIS |
2,718 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Ta) | 10V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3 |
7,722 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
4,896 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Infineon Technologies |
MOSFET N CH 300V 19A D2PAK |
2,898 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | 2340pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-7 |
5,274 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 240A (Tc) | 4.5V, 10V | 0.76mOhm @ 100A, 10V | 2.2V @ 230µA | 380nC @ 10V | ±16V | 26000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,686 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A TO-220SIS |
4,608 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 500mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 75V 21.5A TO220 |
2,232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.6mOhm @ 20A, 10V | 3V @ 250µA | 215nC @ 10V | ±20V | 10350pF @ 37.5V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO220FP |
2,574 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 28mOhm @ 18A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
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ON Semiconductor |
MOSFET N-CH 600V 23A TO220 |
2,340 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 165mOhm @ 11.5A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 2434pF @ 380V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 40V 120A TO-263 |
4,662 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 6.1mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 3240pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |