晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 498/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
-60V7.7MOHMSINGLE |
3,456 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 7.7mOhm @ 50A, 10V | 2.6V @ 1mA | 160nC @ 10V | ±20V | 7700pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 15A TO262 |
7,974 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | ±30V | 841pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS |
3,580 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
7,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 650V 18A TO220F |
4,374 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 390mOhm @ 9A, 10V | 4.5V @ 250µA | 68nC @ 10V | ±30V | 3785pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 18A TO220F |
5,688 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 390mOhm @ 9A, 10V | 4.5V @ 250µA | 68nC @ 10V | ±30V | 3785pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
7,380 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 6.2A TO-220 |
5,526 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31nC @ 10V | ±20V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 250V 25.5A I2PAK |
4,752 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 2450pF @ 25V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 150V WPAK |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 48mOhm @ 12.5A, 10V | - | 37nC @ 10V | ±30V | 2200pF @ 25V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 150V WPAK |
5,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 58mOhm @ 12.5A, 10V | - | 19nC @ 10V | ±30V | 1200pF @ 25V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220-3 |
7,920 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | - | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | - | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 120A D2PAK |
5,508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | 5193pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 900V 6.3A TO-220 |
8,928 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2080pF @ 25V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
-40V4.2MOHMSINGLE |
6,300 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 140A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2.6V @ 1mA | 136nC @ 10V | ±20V | 7400pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
-60V7.7MOHMSINGLE |
5,670 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 7.7mOhm @ 50A, 10V | 2.6V @ 1mA | 160nC @ 10V | ±20V | 7700pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
3,598 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
4,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK |
2,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK |
8,568 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 75V 58A TO-263AB |
2,124 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 9A (Ta), 58A (Tc) | 6V, 10V | 16mOhm @ 58A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1857pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
5,220 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 7.7mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 60A 8SON |
5,994 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 3V, 8V | 4.5mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | +10V, -8V | 1300pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SON-EP (3x3) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 28A 8PSOP |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | 2.5V @ 1mA | 53nC @ 10V | ±20V | 3130pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-PSOP | 8-SMD, Flat Lead |
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Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK |
4,536 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1690pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,104 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1110pF @ 100V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO220FP |
5,130 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 28mOhm @ 18A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2500pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
8,046 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.1mOhm @ 100A, 10V | 4V @ 120µA | 95nC @ 10V | ±20V | 6450pF @ 25V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |