晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 463/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N CH 25V 19A DIRECTFET |
7,164 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | ±16V | 1590pF @ 13V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
4,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 11A TO220 |
8,226 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 140A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 3.7V @ 250µA | 84nC @ 10V | ±20V | 3690pF @ 25V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
8,712 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 10V | 7.3mOhm @ 85A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH TO252-3 |
3,438 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 6.4mOhm @ 85A, 10V | 2.2V @ 150µA | 104nC @ 10V | ±16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 450V 0.045A TO92-3 |
2,538 |
|
- | P-Channel | MOSFET (Metal Oxide) | 450V | 45mA (Ta) | 10V | 150Ohm @ 50mA, 10V | 4.5V @ 1mA | - | ±20V | 120pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
2,304 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 7.4A PPAK 1212-8 |
3,366 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 4.5V, 10V | 18mOhm @ 11.7A, 10V | 3V @ 250µA | 56nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO251A |
3,942 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
6,444 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Ta), 70A (Tc) | 4.5V, 10V | 4.1mOhm @ 35A, 10V | 2.5V @ 1mA | 75nC @ 10V | ±20V | 6.3nF @ 50V | - | 2.5W (Ta), 67W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD |
2,898 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
4,860 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 10A TO262F |
5,382 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1645pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Texas Instruments |
MOSFET P-CH 15V 1.6A 8-SOIC |
7,434 |
|
- | P-Channel | MOSFET (Metal Oxide) | 15V | 1.6A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
7,812 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO262 |
8,406 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 8TSON |
6,840 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 6.7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 21nC @ 10V | ±20V | 440pF @ 100V | - | 56.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 2.6A SSOT3 |
5,400 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 116mOhm @ 2.6A, 10V | 3V @ 250µA | 5.4nC @ 10V | ±20V | 335pF @ 30V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 500V 7A TO-220F |
7,470 |
|
UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 1Ohm @ 3.5A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
6,390 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | - | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | - | 1700pF @ 25V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A D2PAK |
7,182 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | ±20V | 2672pF @ 16V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 14A DIRECTFET |
3,852 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ SC | DirectFET™ Isometric SC |
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Infineon Technologies |
MOSFET N-CH 55V 3.1A SOT-224 |
5,994 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | ±16V | 510pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
Sanken |
MOSFET N-CH 40V 85A TO-220 |
5,742 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 3.2mOhm @ 82.5A, 10V | 2.5V @ 1.5mA | 93.7nC @ 10V | ±20V | 6200pF @ 25V | - | 135W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 11.7A 1212-8 |
6,876 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.7A (Ta) | 4.5V, 10V | 7.5mOhm @ 18.3A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 80V 75A D2PAK |
6,822 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 9.6mOhm @ 20A, 10V | 4V @ 1mA | 59.8nC @ 10V | ±20V | 4682pF @ 25V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
8,262 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 6.9mOhm @ 90A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | - | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,016 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
7,380 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | ±16V | 5680pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3-2 |
3,564 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | +20V, -16V | 4690pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |