晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 426/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken |
MOSFET N-CH 100V 28A TO-252 |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4.5V, 10V | 30mOhm @ 14.2A, 10V | 2.5V @ 650µA | 35.8nC @ 10V | ±20V | 2540pF @ 25V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 30A 136A 5DFN |
8,514 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 136A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.1W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 100V 4A TO252-3 |
2,880 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1Ohm @ 2.8A, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 60V 7.82A 20A 8WDFN |
7,668 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 7.82A (Ta), 20A (Tc) | 4.5V, 10V | 26.5mOhm @ 10A, 10V | 2.2V @ 250µA | 6nC @ 10V | ±20V | 327pF @ 25V | - | 3W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 8V-24V V-DFN3020-8 |
3,024 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 7.2A (Ta) | 1.8V, 4.5V | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 30nC @ 5V | ±8V | 2847pF @ 4V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3020-8 | 8-VDFN |
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Infineon Technologies |
LV POWER MOS |
6,120 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,754 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
5,112 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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ON Semiconductor |
MOSFET N-CH 30V 34A 8WDFN |
7,560 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.6A (Ta), 34A(Tc) | 4.5V, 10V | 11mOhm @ 10A, 10V | 2.2V @ 250µA | 8.8nC @ 4.5V | ±20V | 920pF @ 15V | - | 810mW (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 40A U8FL |
6,012 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 9.4mOhm @ 30A, 10V | 2.1V @ 250µA | 15.2nC @ 10V | ±20V | 770pF @ 15V | - | 3W (Ta), 26W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Panasonic Electronic Components |
MOSFET N CH 33V 12A WMINI8 |
4,194 |
|
- | N-Channel | MOSFET (Metal Oxide) | 33V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 6A, 10V | 2.5V @ 1.73mA | 10.2nC @ 4.5V | ±20V | 1100pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | WMini8-F1 | 8-SMD, Flat Lead |
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Infineon Technologies |
MOSFET N-CH 30V 71A TDSON-8 |
2,754 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 2400pF @ 15V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
|
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|
Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
3,618 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2V @ 250µA | 40nC @ 10V | ±20V | 3100pF @ 15V | - | 2.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8 |
3,222 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 34nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
3,816 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 139A (Ta), 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2.4V @ 300µA | 39nC @ 10V | ±20V | 3.2nF @ 22.5V | - | 2.67W (Ta), 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 27A TO-252 |
2,070 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 40mOhm @ 27A, 10V | 4V @ 28µA | 17nC @ 10V | ±20V | 650pF @ 30V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 77A |
7,938 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 77A (Tc) | 10V | 4.9mOhm @ 35A, 10V | 3.5V @ 50µA | 18nC @ 10V | ±20V | 1150pF @ 25V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3 |
3,186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 1.5Ohm @ 1.5A, 10V | 2.4V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.5A SC70-6 |
2,718 |
|
LITTLE FOOT® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Tc) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13nC @ 8V | ±8V | 355pF @ 10V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Vishay Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
5,202 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.77A (Ta) | 1.8V, 4.5V | 33mOhm @ 5A, 4.5V | 950mV @ 250µA | 14nC @ 4.5V | ±12V | - | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 27A TO252 |
6,174 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 70A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2V @ 250µA | 64nC @ 10V | ±20V | 3430pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 10.7A UDFN6 |
8,514 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 3.3V, 10V | 9mOhm @ 9A, 10V | 2.1V @ 250µA | 18nC @ 10V | ±20V | 1172pF @ 15V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
|
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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8 |
5,418 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 2.5V, 10V | 5.5mOhm @ 15A, 10V | 1.3V @ 250µA | 85nC @ 10V | ±12V | 4621pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8 |
8,676 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 1.8V, 4.5V | 6.7mOhm @ 15A, 4.5V | 1V @ 250µA | 156nC @ 10V | ±10V | 5940pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
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Diodes Incorporated |
MOSFET P-CH 20V 12.7A PWRDI3333 |
6,516 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 12.7A (Ta), 42A (Tc) | 2.5V, 4.5V | 9.5mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 103nC @ 10V | ±10V | 3350pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET NCH 30V 15A TO252 |
4,662 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 55A (Tc) | 4.5V, 10V | 9.5mOhm @ 18A, 10V | 2.5V @ 250µA | 37nC @ 10V | ±20V | 2075pF @ 15V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
|
|
|
ON Semiconductor |
T6 40V DPAK EXPANSION AND |
6,138 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 9.2A (Ta), 23A (Tc) | 10V | 17.9mOhm @ 10A, 10V | 4V @ 20µA | 14nC @ 10V | ±20V | 380pF @ 25V | - | 2.9W (Ta), 18.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL |
8,748 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A SO-8FL |
7,560 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 43nC @ 10V | ±20V | 3044pF @ 15V | - | 920mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 22.5A 80A 5DFN |
8,082 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 2.54mOhm @ 30A, 10V | 2.2V @ 250µA | 32.5nC @ 10V | ±20V | 2300pF @ 15V | - | 2.59W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |