晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 381/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET_(20V 40V) |
3,330 |
|
Automotive, AEC-Q101, OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 7V, 10V | 1mOhm @ 100A, 10V | 3.4V @ 100µA | 132nC @ 10V | ±20V | 7650pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 800V 6A POWERFLAT |
7,146 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 660mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) VHV | 8-PowerVDFN |
|
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STMicroelectronics |
MOSFET N-CH 620V 3.8A IPAK |
5,130 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | ±30V | 550pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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ON Semiconductor |
TRENCH 6 40V SL NFET |
8,406 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 190µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
|
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Diodes Incorporated |
MOSFET BVDSS: 61V 100V,TO220-3,T |
6,300 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 31.9nC @ 10V | ±20V | 1942pF @ 50V | - | 2.8W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
5,274 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.1mOhm @ 24A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 5600pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V IPAK |
7,866 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 950mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | ±25V | 271pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Micro Commercial Co |
N-CHANNEL,MOSFETS,D2PAK PACKAGE |
5,994 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 4.6mOhm @ 60A, 10V | 4V @ 250µA | 101.6nC @ 10V | ±20V | 6124.6pF @ 50V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
STMicroelectronics |
MOSFET N-CH 950V 2A IPAK |
4,950 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10nC @ 10V | 30V | 105pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
NCH 650V 7A POWER MOSFET. R6507 |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5nC @ 10V | ±20V | 470pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 7A POWER MOSFET. R6507 |
7,704 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 4V @ 200µA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
4,356 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 40V 362A |
3,204 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 362A (Tc) | 4.5V, 10V | 700µOhm @ 50A, 10V | 2V @ 280µA | 149nC @ 10V | ±20V | 9400pF @ 20V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET P-CH 40V 120A D2PAK |
4,950 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.5V @ 250µA | 450nC @ 10V | ±20V | 23600pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 8A TO-220SIS |
7,866 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9nC @ 10V | ±20V | 530pF @ 10V | - | 18W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-220FP |
2,538 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1030pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia |
BUK7S0R9-40H/SOT1235/LFPAK88 |
6,030 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 375A (Ta) | 10V | 0.9mOhm @ 25A, 10V | 3.6V @ 1mA | 166nC @ 32V | +20V, -10V | 12888pF @ 25V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
|
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Nexperia |
PSMNR90-40SSH/SOT1235/LFPAK88 |
4,590 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 375A (Ta) | 10V | 0.9mOhm @ 25A, 10V | 3.6V @ 1mA | 166nC @ 10V | ±20V | 12888pF @ 25V | Schottky Diode (Body) | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
|
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STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP |
7,236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 650V 11A D2PAK |
2,520 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 810pF @ 100V | - | 85W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Rohm Semiconductor |
NCH 650V 9A POWER MOSFET. R6509 |
7,884 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 5V @ 230µA | 16.5nC @ 10V | ±20V | 540pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 9A POWER MOSFET. R6509 |
8,406 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 4V @ 230µA | 24nC @ 10V | ±20V | 430pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 150V 30A PPAK SO-8 |
7,848 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 30A (Tc) | 10V | 38mOhm @ 7.7A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 2100pF @ 75V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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STMicroelectronics |
MOSFET N-CH 650V 6.4A TO-220 |
3,472 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.4A (Tc) | 10V | 1.2Ohm @ 3.2A, 10V | 4.5V @ 100µA | 41nC @ 10V | ±30V | 1145pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 800V 5.2A I2PAK |
6,768 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.2A (Tc) | 10V | 1.8Ohm @ 2.6A, 10V | 4.5V @ 100µA | 56nC @ 10V | ±30V | 1138pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
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STMicroelectronics |
MOSFET N-CH 600V 7A TO-220FP |
8,514 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 700mOhm @ 3.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 560pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252 |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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STMicroelectronics |
MOSFET N-CH 650V 14A POWERFLAT |
4,410 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 250mOhm @ 7A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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ON Semiconductor |
SF3 650V 125MOHM MOSFET |
6,642 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 590µA | 49nC @ 10V | ±30V | 1920pF @ 400V | - | 181W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerTSFN |
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Vishay Siliconix |
MOSFET N-CH 800V 4.3A IPAK |
5,274 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 622pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |