晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 369/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
30V N-CHANNEL MOSFET |
24,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 32A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | 1.9V @ 250µA | 42nC @ 10V | ±12V | 2005pF @ 15V | - | 5W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 6A SC-75-6 |
7,380 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 46mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | ±12V | 350pF @ 10V | - | 1.95W (Ta), 10W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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|
|
Rohm Semiconductor |
RQ6A045AP IS THE LOW ON-RESISTAN |
5,904 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | ±8V | 4200pF @ 6V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Nexperia |
BUK7M11-40H/SOT1210/MLFPAK |
2,016 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta) | 10V | 11mOhm @ 10A, 10V | 3.6V @ 1mA | 16nC @ 10V | +20V, -10V | 1022pF @ 25V | - | 50W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
|
|
|
Rohm Semiconductor |
RQ6E045SN IS THE LOW ON - RESIST |
3,600 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4V, 10V | 38mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.5nC @ 5V | ±20V | 520pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V PPAK SC-70-6L |
2,970 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 12.9A (Ta), 30.3A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 27.8nC @ 10V | +16V, -20V | 1170pF @ 15V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
|
Rohm Semiconductor |
RQ5E050AT IS A SMALL SIGNAL MOSF |
7,434 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 26mOhm @ 5A, 10V | 2.5V @ 1mA | 19.4nC @ 10V | ±20V | 880pF @ 15V | - | 760mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V PP 1212-8 |
5,274 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19.7A (Ta), 20A (Tc) | 4.5V, 10V | 5.1mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | +20V, -16V | 1450pF @ 15V | - | 3.57W (Ta), 26.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
|
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|
Vishay Siliconix |
MOSFET N-CHAN 40 V POWERPAK 1212 |
8,154 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 31.7A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61nC @ 10V | +20V, -16V | 3030pF @ 20V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V30V POWERDI333 |
7,938 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 4.5V, 10V | 14.5mOhm @ 10.4A, 10V | 2.2V @ 250µA | 19.3nC @ 10V | ±12V | 4310pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK 1212 |
8,280 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 5.2A (Ta), 14.2A (Tc) | 7.5V, 10V | 54mOhm @ 4A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 550pF @ 50V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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|
Rohm Semiconductor |
RQ6E060AT IS LOW ON-RESISTANCE M |
6,516 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 26.4mOhm @ 6A, 10V | 2.5V @ 1mA | 25.9nC @ 10V | ±20V | 1200pF @ 15V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
STMicroelectronics |
MOSFET N-CH 20V SOT23-6 |
7,884 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 30mOhm @ 2A, 4.5V | 700mV @ 250µA (Min) | 4.6nC @ 4.5V | ±8V | 367pF @ 16V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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|
STMicroelectronics |
MOSFET NCH 60V 36A POWERFLAT |
3,186 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Tc) | 10V | 25mOhm @ 4A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | 450pF @ 25V | - | 3W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Rohm Semiconductor |
RQ6A045ZP IS THE LOW ON - RESIST |
8,208 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 35mOhm @ 4.5A, 4.5V | 1V @ 1mA | 31nC @ 4.5V | ±10V | 2450pF @ 6V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Micro Commercial Co |
N-CHANNEL MOSFET, DPAK PACKAGE |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A | 10V | 1.4Ohm @ 3.5A, 10V | 4.5V @ 250µA | 26nC @ 10V | ±30V | 1600pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Micro Commercial Co |
N-CHANNEL MOSFET, DPAK PACKAGE |
7,326 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 17.5nC @ 10V | ±30V | 462pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Vishay Siliconix |
MOSFET P-CH 30-V (D-S) SO-8 |
3,562 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 18.3A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 41nC @ 10V | +16V, -20V | 1620pF @ 15V | - | 2.3W (Ta), 4.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
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Vishay Siliconix |
MOSFET N-CHAN 25V |
5,184 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 20.1A (Ta), 40A (Tc) | 4.5V, 10V | 5.6mOhm @ 15A, 10V | 2.5V @ 250µA | 24nC @ 10V | +16V, -12V | 1090pF @ 12.5V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
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STMicroelectronics |
MOSFET P-CH 60V 3A POWERFLAT |
3,618 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET. MOSFETS ARE |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 17mOhm @ 7.5A, 10V | 2.5V @ 1mA | 6.8nC @ 5V | ±20V | 440pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
|
|
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta), 35A (Tc) | 10V | 22mOhm @ 8A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 1454pF @ 30V | - | 3.1W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
4,392 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 22mOhm @ 8A, 10V | 2.5V @ 250µA | 23nC @ 10V | ±20V | 1314pF @ 30V | - | 3.1W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
|
Rohm Semiconductor |
RS3L045GN IS THE HIGH RELIABILIT |
6,966 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 4.5A (Ta) | 4.5V, 10V | 59mOhm @ 4.5A, 10V | 2.7V @ 50µA | 5.6nC @ 10V | ±20V | 285pF @ 30V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
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Vishay Siliconix |
MOSFET N-CHAN 30V |
8,046 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 60A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 2.4V @ 250µA | 32nC @ 10V | +20V, -16V | 1470pF @ 15V | - | 5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Vishay Siliconix |
MOSFET N-CHAN 40-V POWERPAK 1212 |
3,078 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 25.4A (Ta), 94A (Tc) | 4.5V, 10V | 3.25mOhm @ 10A, 10V | 2.4V @ 250µA | 50nC @ 10V | +20V, -16V | 2530pF @ 20V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
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Vishay Siliconix |
MOSFET N-CH 20V PPAK 1212-8 |
8,694 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 20V | 43.7A (Ta), 162A (Tc) | 2.5V, 10V | 1.1mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | +12V, -8V | 3415pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
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Rohm Semiconductor |
RQ6A050ZP IS THE LOW ON - RESIST |
4,338 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 5A (Ta) | 1.5V, 4.5V | 26mOhm @ 5A, 4.5V | 1V @ 1mA | 35nC @ 4.5V | ±10V | 2850pF @ 6V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
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Vishay Siliconix |
MOSFET P-CHAN 30V PPAK SO-8L |
4,194 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 9.2mOhm @ 6A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 4900pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 30V |
4,248 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 60A (Tc) | 4.5V, 10V | 3.6mOhm @ 10A, 10V | 2.4V @ 250µA | 36.2nC @ 10V | +20V, -16V | 1710pF @ 15V | - | 5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |