內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 547/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5,778 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5,994 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Alliance Memory, Inc. |
IC SRAM 8M PARALLEL 90TFBGA |
5,616 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
6,930 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP |
|
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Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.6GHZ |
4,806 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (512M x 16) | Parallel | 1.6GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
|
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 84FBGA |
4,158 |
|
WS-P | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | 66MHz | 60ns | 80ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 84-VFBGA | 84-FBGA (11.6x8) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
7,866 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
6,678 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
4,662 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
2,340 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ |
2,412 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ |
8,928 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
4,230 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
2,520 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
5,868 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
3,384 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
4,698 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 52PLCC |
8,262 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 52PLCC |
5,868 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 100MHZ |
3,204 |
|
Automotive, AEC-Q100, HyperFlash™ KL | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | 100MHz | - | 96ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Cypress Semiconductor |
IC FRAM 2M SPI 25MHZ 8SOIC |
6,138 |
|
Automotive, AEC-Q100, F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 2Mb (256K x 8) | SPI | 25MHz | - | - | 2V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Micron Technology Inc. |
IC DRAM 8G PARALLEL 533MHZ |
5,220 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 8Gb (256M x 32) | Parallel | 533MHz | - | - | 1.14V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 168-VFBGA | 168-FBGA (12x12) |
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Micron Technology Inc. |
IC DRAM 4G PARALLEL 78FBGA |
3,726 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (512M x 8) | Parallel | 1.6GHz | 15ns | 19ns | 1.14V ~ 1.26V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
8,010 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
4,662 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 52PLCC |
8,010 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
7,632 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 12ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA |
3,526 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
|
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48BGA |
7,812 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (6x8) |
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Cypress Semiconductor |
IC FLASH 1G SPI 80MHZ |
7,938 |
|
Automotive, AEC-Q100, FS-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 80MHz | - | - | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |