整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 628/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 6A DO4 |
2,250 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 6A DO4 |
6,156 |
|
- | Standard, Reverse Polarity | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 6A DO4 |
3,078 |
|
- | Standard | 600V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 6A DO4 |
3,762 |
|
- | Standard, Reverse Polarity | 600V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 6A DO4 |
6,192 |
|
- | Standard | 800V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 6A DO4 |
3,508 |
|
- | Standard, Reverse Polarity | 800V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 6A DO4 |
5,652 |
|
- | Standard | 1000V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 6A DO4 |
3,042 |
|
- | Standard, Reverse Polarity | 1000V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 6A DO4 |
8,352 |
|
- | Standard | 1200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV 6A DO4 |
7,560 |
|
- | Standard, Reverse Polarity | 1200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 65A TO247AC |
1,986 |
|
- | Schottky | 15V | 65A | 500mV @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18mA @ 15V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 16A DO203AA |
124 |
|
- | Standard | 800V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 16A DO203AA |
6,768 |
|
- | Standard, Reverse Polarity | 800V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 1KV 75A TO247 |
3,954 |
|
- | Standard | 1000V | 75A | 3V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 24A TO220-2 |
4,176 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHTKY 1.2KV 24A TO252-2L |
7,722 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -50°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 12A DO4 |
8,604 |
|
- | Standard, Reverse Polarity | 50V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 12A DO4 |
4,590 |
|
- | Standard | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 12A DO4 |
4,572 |
|
- | Standard, Reverse Polarity | 800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 12A DO4 |
3,744 |
|
- | Standard | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 12A DO4 |
4,338 |
|
- | Standard | 50V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 12A DO4 |
2,844 |
|
- | Standard, Reverse Polarity | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
7,614 |
|
- | Standard | 200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
8,028 |
|
- | Standard | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 12A DO4 |
4,068 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 12A DO5 |
4,428 |
|
- | Standard, Reverse Polarity | 200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 12A DO4 |
7,542 |
|
- | Standard | 800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 12A DO4 |
5,454 |
|
- | Standard, Reverse Polarity | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
7,002 |
|
- | Standard | 200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 12A DO4 |
5,148 |
|
- | Standard, Reverse Polarity | 200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |