整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 617/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 1.2KV 30A TO220 |
6,858 |
|
- | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2 |
2,898 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
8,856 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | - | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220AC |
2,232 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -45°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO220AC |
2,178 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
4,500 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 2A POWERMITE |
4,266 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 30A TO220AC |
8,730 |
|
- | Standard | 600V | 30A | 2.37V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A DO213AB |
5,238 |
|
- | Schottky | 20V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 150V 6A POWERMITE |
5,094 |
|
- | Schottky | 150V | 6A | 750mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 8A DO215AB |
5,976 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 80V 8A DO215AB |
3,580 |
|
- | Schottky | 80V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 90V 8A DO215AB |
3,132 |
|
- | Schottky | 90V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 90V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3 |
5,760 |
|
- | Standard | 600V | 60A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 143ns | 40µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 20A TO3PF |
4,734 |
|
- | Standard | 600V | 20A | 1.98V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 100µA @ 600V | - | Through Hole | TO-3P-3 Full Pack | TO-3PF | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220AC |
4,770 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SBD 8A 650V D2PAK-3 |
3,420 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3 |
6,444 |
|
- | Standard | 600V | 60A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 143ns | 40µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO220-2 |
5,886 |
|
- | Silicon Carbide Schottky | 1200V | - | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
3,400 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE GP 800V 30A ISOPLUS220 |
6,030 |
|
- | Standard | 800V | 30A | 1.45V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | ISOPLUS220™ | ISOPLUS220™ | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
7,344 |
|
- | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 10A POWERMITE |
5,166 |
|
- | Schottky | 40V | 10A | 490mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 35V | 700pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO252-2 |
7,092 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 15A TO247 |
4,284 |
|
- | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 150µA @ 600V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 10A 100V PWRMITE |
4,716 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO263AB |
2,178 |
|
Automotive, AEC-Q101, HEXFRED® | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO263AB |
2,718 |
|
Automotive, AEC-Q101, HEXFRED® | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
4,266 |
|
- | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
6,300 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 400V | 60A | 1.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |