整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 610/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
3,078 |
|
- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 300V 60A TO263 |
5,562 |
|
HiPerFRED²™ | Standard | 300V | 60A | 1.43V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP DSO-19 |
3,562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE GEN PURP 600V 15A TO220AC |
4,842 |
|
HiPerFRED™ | Standard | 600V | 15A | 2.04V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 15A TO220AC |
5,400 |
|
HiPerFRED™ | Standard | 600V | 15A | 2.52V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6,192 |
|
- | Standard | 75V | 200mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
5,202 |
|
FRED Pt® | Standard | 600V | 60A | 1.68V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 81ns | 50µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE GEN PURP 400V 9.5A TO220 |
3,546 |
|
Teccor® | Standard | 400V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -40°C ~ 125°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 15A TO220-2 |
8,370 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
6,912 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SWITCHING |
7,704 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
3,816 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 6A SIC SBD |
5,922 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
5,166 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 18A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 30A TO3PF |
5,004 |
|
- | Standard | 600V | 30A | 1.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 200µA @ 600V | - | Through Hole | TO-3PF Variant, 2 Leads | TO-3PF | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 30A TO263 |
7,362 |
|
HiPerFRED™ | Standard | 600V | 30A | 1.61V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 5A 40V SMCG |
3,276 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 5A DO215AB |
8,820 |
|
- | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 50V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 5A DO215AB |
3,096 |
|
- | Schottky | 60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 20A 600V TO-220A |
3,690 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
2,232 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
6,066 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 35V 8A DO215AB |
5,814 |
|
- | Schottky | 35V | 8A | 520mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 35V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 8A DO215AB |
3,384 |
|
- | Schottky | 40V | 8A | 520mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 8A DO215AB |
3,024 |
|
- | Schottky | 45V | 8A | 520mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 15A TO220 |
4,554 |
|
- | Standard | 1000V | 15A | 3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 235ns | 100µA @ 1000V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO220 |
6,822 |
|
- | Standard | 600V | 52.3A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 126ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
7,560 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 5A DO215AB |
7,002 |
|
- | Schottky | 100V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 80V 5A DO215AB |
5,472 |
|
- | Schottky | 80V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 80V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |