整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 24/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO252-2 |
205,836 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 13.5A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
46,446 |
|
- | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220FP |
13,608 |
|
SWITCHMODE™ | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-3 Full Pack | TO-220FP | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2.5A SMB |
28,740 |
|
- | Silicon Carbide Schottky | 1200V | 2.5A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
52,656 |
|
HEXFRED® | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHTY SIC 650V 10A D2PAK |
13,470 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Texas Instruments |
DIODE GEN PURP 30V 15A DDPAK |
157,992 |
|
- | Standard | 30V | 15A | 26mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 300nA @ 28V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | -40°C ~ 125°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 17A TO220AC |
3,299 |
|
- | Standard | 1200V | 17A | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO220-2 |
148,722 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO252-2 |
53,904 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO263AB |
20,262 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220INS |
57,114 |
|
- | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 400V 400MA DO35 |
26,898 |
|
- | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A DO214AA |
24,702 |
|
- | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 40A TO247 |
21,996 |
|
- | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
75,432 |
|
FRED Pt® | Standard | 300V | 30A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-F2 |
87,990 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 7.5A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220-F2 | -55°C ~ 175°C |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-2 |
56,328 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 19A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO263-2 |
52,392 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 19A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 295pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1KV 30A TO247AD |
21,132 |
|
- | Standard | 1000V | 30A | 2.4V @ 36A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 750µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
15,528 |
|
- | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO252AA |
12,435 |
|
- | Standard | 200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 80A TO247 |
22,896 |
|
- | Standard | 1000V | 80A | 1.9V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
15,732 |
|
- | Standard | 600V | 50A | 1.6V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 400MA DO35 |
21,960 |
|
- | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 40A TO247AC |
14,400 |
|
- | Standard | 800V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
87,396 |
|
- | Standard | 1200V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 30A TO247AD |
27,108 |
|
HiPerFRED™ | Standard | 1200V | 30A | 2.74V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 8A TO263-2 |
14,994 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 60A TO247AD |
30,600 |
|
- | Standard | 600V | 60A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 200µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |