Microsemi 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Microsemi Corporation
記錄 2,560
頁面 6/86
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 800V 1A E3 |
8,928 |
|
Military, MIL-PRF-19500/286 | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | - | E3 | E3 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 3A D5B |
8,874 |
|
- | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
6,852 |
|
Military, MIL-PRF-19500/411 | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A D5A |
7,866 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 440V 1.2A A-MELF |
1,435 |
|
- | Standard | 440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1.2A AXIAL |
8,982 |
|
- | Standard | 600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 500nA @ 600V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 1.2A AXIAL |
6,300 |
|
Military, MIL-PRF-19500/585 | Standard | 660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 1.75A AXIAL |
5,976 |
|
Military, MIL-PRF-19500/590 | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 180A HALFPAK |
4,014 |
|
- | Schottky | 40V | 180A | 700mV @ 180A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 40V | 7500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
7,326 |
|
Military, MIL-PRF-19500/411 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 12A DO203AA |
7,344 |
|
Military, MIL-PRF-19500/260 | Standard | 400V | 12A | 2.3V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2A AXIAL |
7,812 |
|
- | Standard | 100V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 85A DO5 |
4,716 |
|
- | Standard | 600V | 85A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 45A DO203AB |
8,352 |
|
- | Standard | 800V | 45A | 1.15V @ 90A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 500A LP4 |
6,492 |
|
- | Standard | 400V | 500A | 1.5V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 2.5mA @ 400V | - | Chassis Mount | LP4 | LP4 | - |
|
|
|
Microsemi |
DIODE GEN PURP 800V 12A DO203AA |
6,456 |
|
Military, MIL-PRF-19500/260 | Standard | 800V | 12A | 2.3V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 500A LP4 |
6,060 |
|
- | Standard | 200V | 500A | 1.1V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2.5mA @ 200V | - | Chassis Mount | LP4 | LP4 | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 200A HALFPAK |
4,608 |
|
- | Standard | 600V | 200A | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 600V | - | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 3KV 570MA S AXIAL |
5,238 |
|
- | Standard | 3000V | 570mA | 6V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 1µA @ 3000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
5,958 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
1,694 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 3A AXIAL |
5,454 |
|
Military, MIL-PRF-19500/620 | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | B, Axial | - | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
6,246 |
|
Military, MIL-PRF-19500/411 | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO41 |
4,968 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY DO-213AA |
6,768 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 300A DO205 |
4,554 |
|
Military, MIL-PRF-19500/211 | Standard | 1000V | 300A | 1.55V @ 940A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 1000V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE1 |
3,096 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 60pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 200V 75A TO247 |
8,550 |
|
- | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 2.5A DO216 |
5,760 |
|
- | Standard | 50V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 50V | - | Surface Mount | DO-216AA | DO-216 | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
4,104 |
|
- | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |