晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 573/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
MOSFET N-CH 500V 180A SP6 |
4,626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 180A (Tc) | 10V | 20mOhm @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | ±30V | 28000pF @ 25V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 100V 495A SP6 |
2,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | 40000pF @ 25V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 100V 495A SP6 |
5,364 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | 40000pF @ 25V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 200V 417A SP6 |
3,006 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 417A (Tc) | 10V | 5mOhm @ 208.5A, 10V | 5V @ 10mA | 560nC @ 10V | ±30V | 28800pF @ 25V | - | 1560W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 100V 570A SP6 |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 570A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | 40000pF @ 25V | - | 1660W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
IXYS |
MOSFET N-CH 100V 690A MODULE |
8,676 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 690A (Tc) | 10V | 1.8mOhm @ 500mA, 10V | 6V @ 130mA | 2300nC @ 10V | ±20V | 59000pF @ 25V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-DCB | Y3-DCB |
|
|
|
Microsemi |
MOSFET N-CH 1000V 145A SP6 |
5,868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068nC @ 10V | ±30V | 28500pF @ 25V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 116A SP6 |
5,796 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 116A (Tc) | 10V | 120mOhm @ 58A, 10V | 5V @ 20mA | 1100nC @ 10V | ±30V | 28900pF @ 25V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 200V 580A SP6 |
7,128 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 200V | 580A (Tc) | 10V | 3.6mOhm @ 290A, 10V | 5V @ 15mA | 840nC @ 10V | ±30V | 43300pF @ 25V | - | 2270W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 500V 335A SP6 |
4,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 335A (Tc) | 10V | 15mOhm @ 167.5A, 10V | 5V @ 20mA | 800nC @ 10V | ±30V | 42200pF @ 25V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 129A SP6 |
8,100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 129A (Tc) | 10V | 70mOhm @ 64.5A, 10V | 5V @ 15mA | 1116nC @ 10V | ±30V | 31100pF @ 25V | - | 2272W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 171A SP6 |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 171A (Tc) | 10V | 80mOhm @ 85.5A, 10V | 5V @ 30mA | 1650nC @ 10V | ±30V | 43500pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 215A SP6 |
2,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | 5V @ 30mA | 1602nC @ 10V | ±30V | 42700pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
IXYS |
MOSFET N-CH 100V 590A Y3-DCB |
6,516 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 590A (Tc) | 10V | 2.1mOhm @ 500mA, 10V | 6V @ 110mA | 2000nC @ 10V | ±20V | 50000pF @ 25V | - | 2200W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-DCB | Y3-DCB |
|
|
|
Microsemi |
MOSFET N-CH 1200V 171A SP6 |
3,006 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 171A (Tc) | 10V | 80mOhm @ 85.5A, 10V | 5V @ 30mA | 1650nC @ 10V | ±30V | 43500pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 215A SP6 |
7,974 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | 5V @ 30mA | 1602nC @ 10V | ±30V | 42700pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
2,988 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
4,824 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | 8-CDIP Exposed Pad |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 4-PIN |
8,946 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | - |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 600V 100A |
6,300 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 600V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
4,914 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
5,364 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 82A 5X6 PQFN |
7,758 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 82A (Tc) | 4.5V, 10V | 4.2mOhm @ 49A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2190pF @ 15V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
7,398 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 3.2A TO252-3 |
7,434 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO-263 |
7,560 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | ±20V | 3500pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 4.5A D2PAK |
4,356 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
6,408 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
|
|
EPC |
GANFET TRANS 100V BUMPED DIE |
4,392 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Diodes Incorporated |
MOSFET P-CH 60V 7.2A TO252 |
8,550 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 7.2A (Ta), 23.6A (Tc) | 4.5V, 10V | 50mOhm @ 7A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1377pF @ 30V | - | 1.9W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |