晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 456/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP |
6,858 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 450mA (Ta) | 10V | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP |
3,366 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 10V | 270mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 30V 61A DPAK |
5,184 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 61A DPAK |
3,150 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
3,510 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 10.5A 2X2 6MFP |
6,642 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10.5A (Tc) | 1.2V, 4.5V | 80mOhm @ 1A, 4.5V | 700mV @ 250µA | 13nC @ 5V | ±5V | 600pF @ 10V | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot™ (1.5x1) | 6-UFBGA |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC |
8,586 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 15.4mOhm @ 9A, 10V | 2.5V @ 1mA | 30nC @ 5V | ±20V | 3000pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 40V 18A 8HSOP |
7,632 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 7mOhm @ 18A, 10V | 2.5V @ 1mA | 19.5nC @ 10V | ±20V | 1293pF @ 20V | - | 3W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 55A TO252 |
3,492 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 28mOhm @ 20A, 10V | 3.3V @ 250µA | 36nC @ 10V | ±20V | 2245pF @ 50V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 20A TO252 |
5,616 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 140A (Tc) | 4.5V, 10V | 6mOhm @ 86A, 10V | 4V @ 250µA | 51nC @ 10V | 20V | 2280pF @ 25V | - | 2.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 57A D2PAK |
6,318 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 57A (Tc) | 10V | 18mOhm @ 25A, 10V | 4V @ 1mA | - | ±16V | 2000pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 50A 8PQFN |
2,700 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 4.4mOhm @ 50A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 1790pF @ 20V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3 |
3,780 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A DPAK |
3,708 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4.5A TO251 |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 480pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A TO251 |
2,304 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4.5A TO252 |
2,916 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 480pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 22A 100A 5DFN |
7,002 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2200pF @ 50V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
2,070 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | - | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 50A I2PAK |
2,502 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 22mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | ±25V | 1540pF @ 25V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 100V 13.6A TO-220F |
3,508 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13.6A (Tc) | 10V | 100mOhm @ 6.8A, 10V | 4V @ 250µA | 25nC @ 10V | ±25V | 780pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8SOP |
2,718 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
4,896 |
|
- | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
6,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 250V 2.2A 8DFN |
5,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Ta), 14A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 27nC @ 10V | ±30V | 1240pF @ 25V | - | 2W (Ta), 83W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO251 |
8,874 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | 263pF @ 100V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
7,722 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
3,654 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 65A POWER56 |
4,806 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 65A (Tc) | 10V | 5.6mOhm @ 65A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 2560pF @ 30V | - | 100W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
7,740 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 0.94mOhm @ 20A, 10V | 2.2V @ 250µA | 125nC @ 10V | +20V, -16V | 7650pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |