晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 451/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
4,302 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 900V 4A TO220F |
3,906 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 3.6Ohm @ 2A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 880pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOIC |
3,186 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
2,088 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 68A LFPAK |
5,814 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 15mOhm @ 20A, 10V | 4V @ 1mA | 54.5nC @ 10V | ±20V | 3958pF @ 25V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
4,950 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 10.8A (Ta), 98.4A (Tc) | 4.5V, 10V | 8.6mOhm @ 13A, 10V | 3V @ 250µA | 53.7nC @ 10V | ±20V | 2592pF @ 50V | - | 1.5W, 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 80V 5DFN |
4,428 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LV POWER MOS |
7,776 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
6,048 |
|
Automotive, AEC-Q101, QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 700pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON |
6,768 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 8.4mOhm @ 20A, 10V | 3.8V @ 31µA | 25nC @ 10V | ±20V | 1820pF @ 40V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 23A 8WDFN |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 107A (Tc) | 4.5V, 10V | 3mOhm @ 40A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 25V | - | 3.3W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
7,974 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2V @ 60µA | 35nC @ 10V | ±20V | 2100pF @ 20V | - | 3.7W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Renesas Electronics America |
MOSFET N-CH 400V 3A MP3A |
5,436 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | 2.9Ohm @ 1.5A, 10V | - | 6nC @ 10V | ±30V | 165pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 450V 4A MP3A |
5,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 4A (Ta) | 10V | 2.3Ohm @ 2A, 10V | - | 9nC @ 10V | ±30V | 280pF @ 25V | - | 40.3W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A DPAK |
3,436 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
7,830 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 8.4A (Ta), 50.5A (Tc) | 6V, 10V | 14.5mOhm @ 20A, 10V | 4V @ 250µA | 30.1nC @ 10V | ±20V | 2343pF @ 50V | - | 1.5W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
3,042 |
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Automotive, AEC-Q101, QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 5V, 10V | 280mOhm @ 4.5A, 10V | 2V @ 250µA | 21nC @ 5V | ±20V | 1080pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 24A PQFN |
3,654 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3100pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 17A POWER56 |
3,492 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 5.8mOhm @ 17A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1625pF @ 13V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 400V 11A TO220 |
2,736 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 590mOhm @ 6A, 10V | 4.5V @ 250µA | 21nC @ 10V | ±30V | 1110pF @ 25V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
8,676 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 28A (Tc) | 4.5V, 10V | 5.5mOhm @ 19A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | 2960pF @ 15V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CHANNEL 40V 101A DPAK |
7,326 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 101A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 34.3nC @ 10V | ±20V | 2300pF @ 25V | - | 101W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3 |
6,570 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |
6,948 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3,942 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2800pF @ 12V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 600V IPAK3 |
6,030 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO-252 |
7,884 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 50A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 2300pF @ 30V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V 74A TO220AB |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 74A (Tc) | 10V | 11mOhm @ 15A, 10V | 4V @ 1mA | 43nC @ 10V | ±20V | 2782pF @ 12V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
7,236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 11A 8WDFN |
6,768 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.2V @ 250µA | 35.5nC @ 10V | ±20V | 2540pF @ 15V | - | 860mW (Ta), 43.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |