晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 448/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO220AB |
4,176 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V POWER56 |
5,058 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
7,812 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 24A 102A 5DFN |
3,510 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO220 |
2,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.56Ohm @ 3.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1060pF @ 25V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
7,560 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A I2PAK |
7,794 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 670pF @ 25V | - | 3.13W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
6,750 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35nC @ 10V | ±20V | 2350pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 60V 64A 8TDSON |
8,586 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 64A (Tc) | 4.5V, 10V | 6.5mOhm @ 32A, 10V | 2.3V @ 20µA | 13nC @ 4.5V | ±20V | 1800pF @ 30V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 10A DPAK-3 |
8,244 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19nC @ 10V | +10V, -20V | 930pF @ 10V | - | 27W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 15A DPAK-3 |
3,744 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36nC @ 10V | +10V, -20V | 1770pF @ 10V | - | 41W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 20A DPAK-3 |
3,600 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37nC @ 10V | +10V, -20V | 1850pF @ 10V | - | 41W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3 |
4,014 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 820pF @ 10V | - | 38W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 20A DPAK-3 |
6,156 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta) | 6V, 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 780pF @ 10V | - | 38W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 250V 6A CPT3 |
4,086 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 6A (Tc) | 10V | 530mOhm @ 3A, 10V | 5V @ 1mA | 15nC @ 10V | ±30V | 840pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 200V 7.5A CPT3 |
7,704 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 7.5A (Tc) | 10V | 325mOhm @ 3.75A, 10V | 5.25V @ 1mA | 15nC @ 10V | ±30V | 755pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 45V 8A CPT3 |
4,950 |
|
- | P-Channel | MOSFET (Metal Oxide) | 45V | 8A (Ta) | 4V, 10V | 91mOhm @ 8A, 10V | 3V @ 1mA | 93.4nC @ 5V | ±20V | 11000pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 15A CPT3 |
7,920 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4V, 10V | 40mOhm @ 15A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 930pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 15.7A POWERDI506 |
7,740 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 15.7A (Ta), 100A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 4V @ 250µA | 41.9nC @ 10V | ±20V | 2082pF @ 25V | - | 2.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 14.8A TO252 |
3,580 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 14.8A (Ta), 70A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 3V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 31W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET NCH 30V 100A POWERDI |
8,334 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 2V @ 1mA | 77nC @ 10V | ±16V | 5000pF @ 15V | - | 1.2W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 40V 50A POWERDI5060 |
7,470 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CHANNEL 40V 11.4A 8SO |
8,352 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 11.4A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 1.8W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 34A 8DFN |
2,754 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | 2.4V @ 250µA | 50nC @ 10V | ±20V | 2420pF @ 50V | - | 56.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 40V 31A 150A 5DFN |
4,032 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A 8-DFN |
4,698 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 52A (Ta), 85A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2.2V @ 250µA | 90nC @ 10V | ±20V | 4290pF @ 15V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
2,034 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 3V @ 250µA | 90nC @ 10V | ±20V | 5741pF @ 15V | - | 1.3W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB |
7,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 311pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 500V CPT |
3,834 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2A (Tc) | 10V | 5.4Ohm @ 1A, 10V | 4.7V @ 1mA | 6.7nC @ 10V | ±30V | 168pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V CPT |
7,380 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 6.7Ohm @ 1A, 10V | 4.7V @ 1mA | 7nC @ 10V | ±30V | 175pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |