晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 7/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET 2N-CH 40V 6A 1212-8 |
26,406 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 40V | 6A | 32mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | 670pF @ 20V | 20.8W | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
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Texas Instruments |
MOSFET 2N-CH 30V 15A 5PTAB |
33,930 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 15A | 16.3mOhm @ 8A, 8V | 1.9V @ 250µA | 5nC @ 4.5V | 564pF @ 15V | 4W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (3x2.5) |
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Infineon Technologies |
MOSFET 2P-CH 20V 9A 8-SOIC |
382,044 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 9A | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 40V 60A PPAK SO-8 |
264,246 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 40V | 60A | 5.8mOhm @ 18.5A, 10V | 2.5V @ 250µA | 65nC @ 10V | 2300pF @ 20V | 46W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 100V 3.5A 8SOIC |
43,920 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 100V | 3.5A | 62mOhm @ 3.5A, 10V | 4V @ 250µA | 7.1nC @ 10V | 398pF @ 50V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 80V 4.7A 8-SO |
50,328 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 80V | 4.7A | 44mOhm @ 4.7A, 10V | 4V @ 250µA | 35nC @ 10V | 1180pF @ 40V | 900mW | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Texas Instruments |
MOSFET 2N-CH 30V 20A 8SON |
634,104 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 2.1V @ 250µA | 5.8nC @ 4.5V | 900pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (3.3x3.3) |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 60V 3.2A PPAK SO-8 |
86,826 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC |
24,168 |
|
LITTLE FOOT® | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 5.8A, 8.2A | 18.5mOhm @ 6.8A, 10V | 3V @ 250µA | 10nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
365,664 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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|
Infineon Technologies |
MOSFET 2N-CH 100V 20A TDSON-8 |
215,058 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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|
EPC |
GANFET TRANS SYM 100V BUMPED DIE |
78,744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Texas Instruments |
MOSFET N-CH 30V POWERBLOCK |
46,733 |
|
NexFET™ | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | - | - | 1.9V @ 250µA | 7.4nC @ 4.5V | 1050pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (3.3x3.3) |
|
|
|
Texas Instruments |
MOSFET 2N-CH 30V 25A 8SON |
291,192 |
|
NexFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 25A | - | 1.15V @ 250µA | 12.5nC @ 4.5V | 1800pF @ 15V | 8.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 60V 2.9A 8-SOIC |
66,138 |
|
Automotive, AEC-Q101, PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 60V | 2.9A | 105mOhm @ 2.9A, 10V | 3V @ 250µA | 23nC @ 10V | 1020pF @ 30V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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Vishay Siliconix |
MOSFET 2N-CH 20V 19.8A 8-SOIC |
24,054 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 20V | 19.8A | 4.6mOhm @ 10A, 10V | 2.4V @ 250µA | 45nC @ 10V | 2110pF @ 10V | 3.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Texas Instruments |
MOSFET 2N-CH 25V 20A 8SON |
6,998 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 20A | 9.6mOhm @ 14A, 8V | 2.1V @ 250µA | 6.2nC @ 4.5V | 920pF @ 12.5V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (3.3x3.3) |
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|
ON Semiconductor |
MOSFET 2N-CH 25V 17.5A/38A 8PQFN |
101,088 |
|
PowerTrench® | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 25V | 17.5A, 38A | 4.7mOhm @ 17.5A, 10V | 2V @ 250µA | 26nC @ 10V | 1570pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
|
Diodes Incorporated |
MOSFET 2P-CH 60V 3.7A 8-SOIC |
33,366 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.7A | 55mOhm @ 3.5A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 1580pF @ 30V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
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Infineon Technologies |
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC |
35,334 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Microchip Technology |
MOSFET N/P-CH 200V 8SOIC |
23,682 |
|
- | N and P-Channel | Standard | 200V | - | 7Ohm @ 1A, 10V | 2V @ 1mA | - | 110pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Texas Instruments |
MOSFET 2N-CH 25V 40A 8SON |
102,906 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 40A | 6mOhm @ 20A, 8V | 2.1V @ 250µA | 10.7nC @ 4.5V | 1870pF @ 12.5V | 13W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
|
|
ON Semiconductor |
MOSFET 4N-CH 60V 8A MLP4.5X5 |
21,660 |
|
GreenBridge™ PowerTrench® | 4 N-Channel (H-Bridge) | Logic Level Gate | 60V | 8A | 17.5mOhm @ 8A, 10V | 3V @ 250µA | 33nC @ 10V | 2295pF @ 30V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 12-WDFN Exposed Pad | 12-MLP (5x4.5) |
|
|
|
Texas Instruments |
MOSFET 2N-CH 30V 40A 8LSON |
2,941 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 40A | - | 2.1V @ 250µA | 19nC @ 4.5V | 3190pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 25V 15A/26A POWER56 |
59,658 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 15A, 26A | 5.6mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 10V | 1680pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 25V 13A/26A PWR CLP |
93,132 |
|
PowerTrench® | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 25V | 13A, 26A | 7mOhm @ 12A, 4.5V | 2.2V @ 250µA | 8nC @ 4.5V | 1075pF @ 13V | 800mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Powerclip-33 |
|
|
|
Microchip Technology |
MOSFET 2N/2P-CH 200V 12VDFN |
13,458 |
|
- | 2 N and 2 P-Channel | Standard | 200V | - | 6Ohm @ 1A, 10V | 2.4V @ 1mA | - | 56pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78,798 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Sanken |
MOSFET 3N/3P-CH 60V 10A 12-SIP |
15,174 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 10A | 140mOhm @ 5A, 4V | - | - | 460pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
|
|
Microsemi |
MOSFET 2N-CH 200V 372A SP6 |
6,966 |
|
- | 2 N-Channel (Half Bridge) | Standard | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |