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Microsemi 晶體管-IGBT-單

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類別半導體 / 晶體管 / 晶體管-IGBT-單
制造商Microsemi Corporation
記錄 145
頁面 3/5
圖片
型號
制造商
描述
庫存
數量
系列
IGBT類型
電壓-集電極發射極擊穿(最大值)
當前-集電極(Ic)(最大值)
電流-集電極脈沖(Icm)
Vce(on)(Max)@ Vge,Ic
功率-最大
開關能量
輸入類型
門禁費用
25°C時的Td(開/關)
測試條件
反向恢復時間(trr)
工作溫度
安裝類型
包裝/箱
供應商設備包裝
APT15GT120BRDQ1G
Microsemi
IGBT 1200V 36A 250W TO247
2,772
Thunderbolt IGBT®
NPT
1200V
36A
45A
3.6V @ 15V, 15A
250W
585µJ (on), 260µJ (off)
Standard
105nC
10ns/85ns
800V, 15A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GN60BDQ2G
Microsemi
IGBT 600V 63A 203W TO247
4,302
-
Trench Field Stop
600V
63A
90A
1.9V @ 15V, 30A
203W
525µJ (on), 700µJ (off)
Standard
165nC
12ns/155ns
400V, 30A, 4.3Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT35GA90B
Microsemi
IGBT 900V 63A 290W TO-247
8,352
POWER MOS 8™
PT
900V
63A
105A
3.1V @ 15V, 18A
290W
642µJ (on), 382µJ (off)
Standard
84nC
12ns/104ns
600V, 18A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP60BG
Microsemi
IGBT 600V 56A 250W TO247
8,388
POWER MOS 7®
PT
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GN60BG
Microsemi
IGBT 600V 107A 366W TO247
5,850
-
Trench Field Stop
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP60BDQ1G
Microsemi
IGBT 600V 56A 250W TO247
6,120
POWER MOS 7®
PT
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 120µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT54GA60B
Microsemi
IGBT 600V 96A 416W TO-247
4,464
POWER MOS 8™
PT
600V
96A
161A
2.5V @ 15V, 32A
416W
534µJ (on), 466µJ (off)
Standard
158nC
17ns/112ns
400V, 32A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP90BDQ1G
Microsemi
IGBT 900V 43A 250W TO247
3,798
POWER MOS 7®
PT
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT13GP120BG
Microsemi
IGBT 1200V 41A 250W TO247
1,020
POWER MOS 7®
PT
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GN120BDQ1G
Microsemi
IGBT 1200V 45A 195W TO247
16
-
Trench Field Stop
1200V
45A
45A
2.1V @ 15V, 15A
195W
410µJ (on), 950µJ (off)
Standard
90nC
10ns/150ns
800V, 15A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT75GN60BG
Microsemi
IGBT 600V 155A 536W TO247
7,056
-
Trench Field Stop
600V
155A
225A
1.85V @ 15V, 75A
536W
2500µJ (on), 2140µJ (off)
Standard
485nC
47ns/385ns
400V, 75A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GT60BRG
Microsemi
IGBT 600V 64A 250W TO247
886
Thunderbolt IGBT®
NPT
600V
64A
110A
2.5V @ 15V, 30A
250W
525µJ (on), 600µJ (off)
Standard
145nC
12ns/225ns
400V, 30A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GN60BDQ2G
Microsemi
IGBT 600V 107A 366W TO247
3,436
-
Trench Field Stop
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65B2DU30
Microsemi
INSULATED GATE BIPOLAR TRANSISTO
5,742
-
NPT
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX™ [B2]
APT44GA60BD30
Microsemi
IGBT 600V 78A 337W TO-247
8,586
POWER MOS 8™
PT
600V
78A
130A
2.5V @ 15V, 26A
337W
409µJ (on), 258µJ (off)
Standard
128nC
16ns/84ns
400V, 26A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GS60BRG
Microsemi
IGBT 600V 93A 415W TO247
3,546
Thunderbolt IGBT®
NPT
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GS60BRDLG
Microsemi
IGBT 600V 54A 250W TO247
3,600
-
NPT
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT13GP120BDQ1G
Microsemi
IGBT 1200V 41A 250W TO247
7,732
POWER MOS 7®
PT
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT70GR65B
Microsemi
IGBT 650V 134A 595W TO-247
6,174
-
NPT
650V
134A
260A
2.4V @ 15V, 70A
595W
1.51mJ (on), 1.46mJ (off)
Standard
305nC
19ns/170ns
433V, 70A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT54GA60BD30
Microsemi
IGBT 600V 96A 416W TO247
46
-
PT
600V
96A
161A
2.5V @ 15V, 32A
416W
534µJ (on), 466µJ (off)
Standard
28nC
17ns/112ns
400V, 32A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP60BDLG
Microsemi
IGBT 600V 56A 250W TO247
3,420
-
PT
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT70GR65B2DU40
Microsemi
INSULATED GATE BIPOLAR TRANSISTO
5,400
-
NPT
650V
134A
280A
2.4V @ 15V, 70A
595W
-
Standard
305nC
18ns/170ns
433V, 70A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX™ [B2]
APT30GP60BG
Microsemi
IGBT 600V 100A 463W TO247
2,574
POWER MOS 7®
PT
600V
100A
100A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GR120S
Microsemi
IGBT 1200V 88A 500W D3PAK
8,640
-
NPT
1200V
88A
160A
3.2V @ 15V, 40A
500W
1.38mJ (on), 906µJ (off)
Standard
210nC
22ns/163ns
600V, 40A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D3Pak
APT64GA90B
Microsemi
IGBT 900V 117A 500W TO247
6,606
-
PT
900V
117A
193A
3.1V @ 15V, 38A
500W
1857µJ (on), 2311µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT100GN60B2G
Microsemi
IGBT 600V 229A 625W TMAX
42
-
Trench Field Stop
600V
229A
300A
1.85V @ 15V, 100A
625W
4.7mJ (on), 2.675mJ (off)
Standard
600nC
31ns/310ns
400V, 100A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
-
APT25GP90BDQ1G
Microsemi
IGBT 900V 72A 417W TO247
3,312
POWER MOS 7®
PT
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 40A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GN120B2DQ2G
Microsemi
IGBT 1200V 67A 272W TMAX
2,224
-
NPT, Trench Field Stop
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT30GP60B2DLG
Microsemi
IGBT 600V 100A 463W TMAX
8,604
-
PT
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX™
APT50GR120L
Microsemi
IGBT 1200V 117A 694W TO264
2,286
-
NPT
1200V
117A
200A
3.2V @ 15V, 50A
694W
2.14mJ (on), 1.48mJ (off)
Standard
445nC
28ns/237ns
600V, 50A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264