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Vishay Semiconductor Diodes Division 晶體管-IGBT-模塊

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類別半導體 / 晶體管 / 晶體管-IGBT-模塊
制造商Vishay Semiconductor Diodes Division
記錄 138
頁面 3/5
圖片
型號
制造商
描述
庫存
數量
系列
IGBT類型
配置
電壓-集電極發射極擊穿(最大值)
當前-集電極(Ic)(最大值)
功率-最大
Vce(on)(Max)@ Vge,Ic
當前-集電極截止(最大值)
輸入電容(Cies)@ Vce
輸入
NTC熱敏電阻
工作溫度
安裝類型
包裝/箱
供應商設備包裝
VS-ETY020P120F
Vishay Semiconductor Diodes Division
OUTPUT & SW MODULES - EMIPAK 2B
6,516
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VS-GA300TD60S
Vishay Semiconductor Diodes Division
IGBT 600V 530A 1136W INT-A-PAK
8,514
-
-
Half Bridge
600V
530A
1136W
1.45V @ 15V, 300A
750µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GB300LH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 500A 1645W INT-A-PAK
2,412
-
-
Single
1200V
500A
1645W
2V @ 15V, 300A (Typ)
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300NH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 500A 1645W INT-A-PAK
4,608
-
-
Single
1200V
500A
1645W
2.45V @ 15V, 300A
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB400AH120U
Vishay Semiconductor Diodes Division
IGBT 1200V 550A 2841W INT-A-PAK
6,516
-
-
Single
1200V
550A
2841W
3.6V @ 15V, 400A
5mA
33.7nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GT300YH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 341A 1042W DIAP
7,650
-
Trench
Half Bridge
1200V
341A
1042W
2.17V @ 15V, 300A (Typ)
300µA
36nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GT100TP60N
Vishay Semiconductor Diodes Division
IGBT 600V 160A 417W INT-A-PAK
2,628
-
Trench
Half Bridge
600V
160A
417W
2.1V @ 15V, 100A
5mA
7.71nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GA400TD60S
Vishay Semiconductor Diodes Division
IGBT 600V 750A 1563W INT-A-PAK
6,930
-
-
Half Bridge
600V
750A
1563W
1.52V @ 15V, 400A
1mA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GB600AH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 910A 3125W INT-A-PAK
3,312
-
-
Single
1200V
910A
3125W
1.9V @ 15V, 600A (Typ)
5mA
41nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GB75TP120N
Vishay Semiconductor Diodes Division
IGBT 1200V 150A 543W INT-A-PAK
2,736
-
-
Half Bridge
1200V
150A
543W
2.35V @ 15V, 75A
5mA
5.52nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GB400TH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 800A 2604W INT-A-PAK
7,992
-
-
Half Bridge
1200V
800A
2604W
1.9V @ 15V, 400A (Typ)
5mA
32.7nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB400TH120U
Vishay Semiconductor Diodes Division
IGBT 1200V 660A 2660W INT-A-PAK
7,794
-
NPT
Half Bridge
1200V
660A
2660W
3.6V @ 15V, 400A
5mA
33.7nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100NH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
7,740
-
-
Single
1200V
200A
833W
2.35V @ 15V, 100A
5mA
8.58nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100LH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
7,560
-
-
Single
1200V
200A
833W
1.77V @ 15V, 100A (Typ)
1mA
8.96nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB75YF120N
Vishay Semiconductor Diodes Division
IGBT 1200V 100A 480W ECONO
3,690
-
-
-
1200V
100A
480W
4.5V @ 15V, 100A
250µA
-
Standard
No
150°C (TJ)
Chassis Mount
Module
ECONO2 4PACK
VS-GB75YF120UT
Vishay Semiconductor Diodes Division
IGBT 1200V 100A 480W ECONO
3,546
-
-
-
1200V
100A
480W
4.5V @ 15V, 100A
250µA
-
Standard
Yes
150°C (TJ)
Chassis Mount
Module
ECONO2 4PACK
VS-GB100TH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 200A 833W INT-A-PAK
5,058
-
-
Half Bridge
1200V
200A
833W
2.35V @ 15V, 100A
5mA
8.58nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100TH120U
Vishay Semiconductor Diodes Division
IGBT 1200V 200A 1136W INT-A-PAK
6,066
-
NPT
Half Bridge
1200V
200A
1136W
3.6V @ 15V, 100A
5mA
8.45nF @ 20V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GA200TH60S
Vishay Semiconductor Diodes Division
IGBT 600V 260A 1042W INT-A-PAK
5,220
-
-
Half Bridge
600V
260A
1042W
1.9V @ 15V, 200A (Typ)
5µA
13.1nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200LH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 370A 1562W INT-A-PAK
4,104
-
-
Single
1200V
370A
1562W
2.07V @ 15V, 200A (Typ)
100nA
18nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200NH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 420A 1562W INT-A-PAK
3,816
-
-
Single
1200V
420A
1562W
1.8V @ 15V, 200A (Typ)
5mA
18nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB150TH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 300A 1008W INT-A-PAK
6,822
-
-
Half Bridge
1200V
300A
1008W
2.35V @ 15V, 150A
5mA
11nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300AH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 620A 2500W INT-A-PAK
5,670
-
-
Single
1200V
620A
2500W
1.9V @ 15V, 300A (Typ)
5mA
21nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GB200TH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 360A 1136W INT-A-PAK
2,646
-
-
Half Bridge
1200V
360A
1136W
2.35V @ 15V, 200A
5mA
14.9nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200TH120U
Vishay Semiconductor Diodes Division
IGBT 1200V 330A 1316W INT-A-PAK
2,250
-
-
Half Bridge
1200V
330A
1316W
3.6V @ 15V, 200A
5mA
16.9nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GT400TH60N
Vishay Semiconductor Diodes Division
IGBT 600V 530A 1600W DIAP
5,022
-
Trench
Half Bridge
600V
530A
1600W
2.05V @ 15V, 400A
5mA
30.8nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GB400AH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 650A 2500W INT-A-PAK
2,466
-
-
Single
1200V
650A
2500W
1.9V @ 15V, 400A (Typ)
5mA
30nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GT300FD060N
Vishay Semiconductor Diodes Division
IGBT 600V 379A 1250W DIAP
4,302
-
Trench Field Stop
Three Level Inverter
600V
379A
1250W
2.5V @ 15V, 300A
250µA
23.3nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
Dual INT-A-PAK (4 + 8)
Dual INT-A-PAK
VS-GB300TH120N
Vishay Semiconductor Diodes Division
IGBT 1200V 500A 1645W INT-A-PAK
7,650
-
-
Half Bridge
1200V
500A
1645W
2.45V @ 15V, 300A
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300TH120U
Vishay Semiconductor Diodes Division
IGBT 1200V 530A 2119W INT-A-PAK
2,286
-
-
Half Bridge
1200V
530A
2119W
3.6V @ 15V, 300A
5mA
25.3nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK