Toshiba Semiconductor and Storage 晶體管-雙極（BJT）-單，預偏置
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展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-雙極（BJT）-單，預偏置
制造商Toshiba Semiconductor and Storage
記錄 227
頁面 4/8
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 晶體管類型 | 當前-集電極（Ic）（最大值） | 電壓-集電極發射極擊穿（最大值） | 電阻-基本（R1） | 電阻-發射極基（R2） | 直流電流增益（hFE）（最小值）@ Ic，Vce | Vce飽和度（最大值）@ Ib，Ic | 當前-集電極截止（最大值） | 頻率-過渡 | 功率-最大 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR10KOHM Q1BER4.7KOHM |
3,526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR47KOHM Q1BER10KOHM |
5,868 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR22KOHM Q |
8,496 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR4.7KOHM |
7,596 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR10KOHM Q1BERINFINIT |
7,236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER10KOHM |
5,886 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER10KOHM |
5,328 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN BRT Q1BSR4.7KOHM |
6,318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER22KOHM |
4,806 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER47KOHM |
3,598 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR2.2KOHM Q1BER47KOHM |
6,228 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER47KOHM |
8,910 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER47KOHM |
2,304 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER22KOHM |
3,240 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BERINFINIT |
6,534 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR0.47KOHM |
8,208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR1KOHM Q1 |
8,406 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V SOT723 |
4,896 |
|
- | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.15W VESM |
6,822 |
|
- | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.15W VESM |
2,358 |
|
- | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | - | 120 @ 1mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN PREBIAS 50V 100MA VESM |
7,146 |
|
- | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM PLN (LF) TRANSISTO |
8,154 |
|
- | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
7,002 |
|
- | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | - | 120 @ 1mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
2,574 |
|
- | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
5,616 |
|
- | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
8,334 |
|
- | NPN - Pre-Biased | 100mA | 50V | 1 kOhms | - | 120 @ 1mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
6,174 |
|
- | NPN - Pre-Biased | 100mA | 50V | 200 kOhms | - | 120 @ 1mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
7,434 |
|
- | PNP - Pre-Biased | 100mA | 50V | 47 kOhms | 22 kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
4,374 |
|
- | NPN - Pre-Biased | 100mA | 50V | 1 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F VESM TRANSISTOR PD 150M |
3,474 |
|
- | PNP - Pre-Biased | 100mA | 50V | 22 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |