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Toshiba introduces miniaturized, ultra-thin package common drain MOSFETs with lower on-resistance

六月 6 2023 2023-06 Semiconductors Toshiba Semiconductor and Storage
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Toshiba Electronic Components and Memory Devices Corporation announced the introduction of a 12V common drain N-channel MOSFET "SSM14N956L" with a current rating of 20A, which can be used as a battery protection circuit in lithium-ion (Li-ion) battery packs for mobile devices.

     Toshiba Electronic Components and Memory Devices Corporation announced the introduction of a 12V common drain N-channel MOSFET "SSM14N956L" with a current rating of 20A, which can be used as a battery protection circuit in lithium-ion (Li-ion) battery packs for mobile devices.

     Lithium-ion battery packs rely on highly stable protection circuits to reduce the heat generated when charging and discharging for increased safety. These circuits must have the characteristics of low power consumption and high-density packaging, while requiring the MOSFETs to be small and thin, and have lower on-resistance.

     The SSM14N956L uses Toshiba's proprietary micromachining process, which is also used in the already released SSM10N954L. Low power consumption is achieved by industry-leading low on-resistance characteristics [1], and low standby power consumption is ensured by industry-leading low gate source leakage current characteristics [1]. These features help extend battery life. In addition, the new product also uses a new compact and thin package TCSPED-302701 (2.74mm x 3.0mm, thickness = 0.085mm (typical value).

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