The new CMOS DDR4 dram combines low power consumption with fast clock speeds

     Alliance Memory has expanded its CMOS DDR4 sdram portfolio with the introduction of six new 8Gb, 16Gb and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN and AS4C4G8D4-62BCN are based on a new process technology, Delivering higher performance and lower costs with lower power consumption, higher speeds and transmission rates, gives the company's customers a wider choice of applications.

     DDR4 dram offers a low operating voltage of +1.2V (±0.06V), which extends the battery life of portable electronics such as smartphones and tablets. These devices are designed, certified and recommended for 5G and iot design; Computing applications; Surveillance, gaming and network storage systems; Smart meters; HMI, Digital Signal Controller and pnd; And more. Based on the 8n prefetch architecture, the device offers a fast clock speed of 1600MHz and a transfer rate of 3200MT/s.

     The device supports sequential burst and interlaced burst types, read or write burst lengths BC4, BL8 and dynamic burst. The Auto precharge feature provides self-timed line precharge to start at the end of the burst sequence. Easy to use refresh features include automatic or self-refresh.

     With the smallest chip size, DDR4 sdram provides a reliable plug-in, pin-to-pin-compatible alternative to many similar solutions, eliminating costly redesigns and part revalidation. These devices are available in the commercial (0 ° C to +95 ° C) temperature range and are ideal for industrial, networking, telecommunications, gaming and consumer markets.