Taiwan Semiconductor Corporation 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Taiwan Semiconductor Corporation
記錄 5,388
頁面 2/180
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
44,058 |
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- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 1000V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A SOD123W |
28,458 |
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- | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
28,338 |
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- | Standard | 600V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
150,540 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 1A SOD123W |
27,972 |
|
- | Schottky | 200V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO214AC |
67,548 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A SOD123W |
306,360 |
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- | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A MICRO SMA |
230,856 |
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- | Schottky | 60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | 40pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A SOD123W |
29,658 |
|
- | Schottky | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A SOD123W |
請求報價 |
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- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 2A DO204AC |
15,270 |
|
- | Standard | 1000V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A SOD123W |
67,182 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A SUB SMA |
46,914 |
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- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A DO214AC |
19,596 |
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- | Schottky | 45V | 3A | 480mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AC |
58,170 |
|
- | Schottky | 60V | 3A | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 500µA @ 60V | 450pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 5A DO214AA |
52,734 |
|
- | Standard | 1000V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AC |
39,378 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
78,438 |
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- | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A DO214AB |
44,094 |
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- | Standard | 600V | 8A | 985mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO277A |
135,672 |
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- | Schottky | 60V | 10A | 640mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A TO277A |
92,964 |
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- | Schottky | 200V | 10A | 910mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 15A TO277A |
62,178 |
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- | Schottky | 150V | 15A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 15A DO214AB |
25,038 |
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- | Standard | 1000V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO201AD |
22,806 |
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- | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A DO201AD |
16,788 |
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- | Standard | 200V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 15A DO214AB |
17,574 |
|
- | Standard | 1000V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO277A |
53,784 |
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- | Schottky | 60V | 10A | 540mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A DO201AD |
24,654 |
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- | Standard | 600V | 6A | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 60V DO-214AB |
19,116 |
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- | Schottky | 60V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A TO277A |
283,230 |
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- | Schottky | 60V | 20A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |