晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 653/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
6,498 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
8,460 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
2,016 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
5,832 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
8,460 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
8,046 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
3,168 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
6,696 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
3,996 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
2,538 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
7,812 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
7,470 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
5,472 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
3,420 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
8,604 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
8,820 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Infineon Technologies |
MOSFET N-CH 80V 9.3A 8-SOIC |
3,852 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 15mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 1510pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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STMicroelectronics |
MOSFET N-CH 200V 110A ISOTOP |
4,482 |
|
MESH OVERLAY™ | N-Channel | MOSFET (Metal Oxide) | 200V | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | 4V @ 250µA | 504nC @ 10V | ±20V | 7900pF @ 25V | - | 500W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 500V 34A MAX247 |
3,168 |
|
PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 130mOhm @ 17A, 10V | 5V @ 250µA | 223nC @ 10V | ±30V | 9100pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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|
ON Semiconductor |
MOSFET N-CH 60V 2A TO-92 |
1,650 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 10V | 1.7Ohm @ 1A, 10V | 3.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
ON Semiconductor |
MOSFET N-CH 90V 2A TO-92 |
7,830 |
|
- | N-Channel | MOSFET (Metal Oxide) | 90V | 2A (Ta) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 24V 80A IPAK |
4,554 |
|
- | N-Channel | MOSFET (Metal Oxide) | 24V | 80A (Tc) | 4.5V, 10V | 5.8mOhm @ 80A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 2600pF @ 20V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Ta) | 10V | 9.5mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 4510pF @ 25V | - | 2.4W (Ta), 214W (Tj) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23 |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 500MA SOT-23 |
3,436 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92 |
4,878 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 25V | - | 350mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
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ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-23 |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 1Ohm @ 300mA, 10V | 2.4V @ 250µA | - | ±20V | 45pF @ 5V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
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ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-323 |
4,770 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 1Ohm @ 300mA, 10V | 2.4V @ 250µA | - | ±20V | 45pF @ 5V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET P-CH 20V 0.3A SOT-323 |
5,814 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 2.2Ohm @ 200mA, 10V | 2.4V @ 250µA | 2.7nC @ 10V | ±20V | 50pF @ 5V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |