晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 645/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
3,474 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
7,146 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V SOT223 |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
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Vishay Siliconix |
MOSFET N-CH 55V 1.6A SOT223 |
7,218 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 1.6A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 36A DPAK |
4,842 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 36A DPAK |
8,298 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
2,196 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
8,100 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
2,034 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 30V 91A DPAK |
8,406 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2672pF @ 16V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 30V 91A DPAK |
5,436 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2672pF @ 16V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET N-CH 20V 36A I-PAK |
2,520 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247 |
3,816 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6790pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO262 |
3,672 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET |
2,988 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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ON Semiconductor |
MOSFET N-CH 55V 100A TO-220AB |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 55V 49A TO-220AB |
4,806 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 22mOhm @ 25A, 10V | 4V @ 250µA | 75nC @ 20V | ±20V | 1060pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 22A TO-220AB |
2,070 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | - | 64mOhm @ 22A, 10V | 4V @ 250µA | 52nC @ 20V | - | 790pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 33A TO-220AB |
7,056 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 40mOhm @ 33A, 10V | 4V @ 250µA | 79nC @ 20V | ±20V | 1220pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 20A TO-247 |
3,978 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | - | 270mOhm @ 11A, 10V | 4V @ 250µA | 190nC @ 10V | - | 4100pF @ 25V | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 100V 8.4A TO-252AA |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8.4A (Tc) | 10V | 270mOhm @ 5.9A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 8.4A I-PAK |
8,892 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8.4A (Tc) | - | 270mOhm @ 5.9A, 10V | 4V @ 250µA | 15nC @ 10V | - | 350pF @ 25V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 200V 4.6A I-PAK |
4,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.6A (Tc) | 10V | 800mOhm @ 2.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 330pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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ON Semiconductor |
MOSFET P-CH 30V 10A TO-252AA |
7,074 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | - | 200mOhm @ 10A, 5V | 2V @ 250µA | 30nC @ 10V | - | 1035pF @ 25V | - | - | - | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 50V 14A I-PAK |
6,300 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40nC @ 20V | ±20V | 570pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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ON Semiconductor |
MOSFET N-CH 50V 14A TO-252AA |
3,330 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40nC @ 20V | ±20V | 570pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET P-CH 50V 15A I-PAK |
4,770 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 150mOhm @ 15A, 10V | 4V @ 250µA | 150nC @ 20V | ±20V | 1150pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET P-CH 50V 15A TO-252AA |
4,230 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 150mOhm @ 15A, 10V | 4V @ 250µA | 150nC @ 20V | ±20V | 1150pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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ON Semiconductor |
MOSFET N-CH 50V 16A I-PAK |
3,042 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80nC @ 20V | ±20V | 900pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA |
3,348 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 16A (Tc) | 4V, 5V | 47mOhm @ 16A, 5V | 2V @ 250mA | 80nC @ 10V | ±10V | - | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |