晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 525/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 600V 10A TO220AB |
8,712 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 110A D2PAK |
3,006 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 110A (Tc) | 10V | 13mOhm @ 500mA, 10V | 4.5V @ 250µA | 150nC @ 10V | ±20V | 8600pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 150V 15A TO-263 |
5,652 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 15A (Tc) | 10V | 240mOhm @ 7A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±15V | 3650pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 100V 26A TO-263 |
6,678 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 90mOhm @ 13A, 10V | 4.5V @ 250µA | 52nC @ 10V | ±15V | 3820pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET P-CH 50V 48A TO-263 |
4,320 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | ±15V | 3660pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220 |
7,200 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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ON Semiconductor |
FET ENGR DEV-NOT REL |
5,256 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 8.5mOhm @ 76A, 10V | 4V @ 130µA | 34nC @ 10V | ±20V | 2475pF @ 50V | - | 2.4W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 16A SO8FL |
4,482 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Ta), 104A (Tc) | 6V, 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 3100pF @ 50V | - | 3.3W (Ta), 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 800V 750MA TO-220AB |
3,978 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 750mA (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 25µA | 8.5nC @ 10V | ±20V | 220pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7 |
2,430 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.8V @ 183µA | 138nC @ 10V | ±20V | 10200pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO-3PN |
2,952 |
|
π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 40V DIRECTFET L8 |
5,814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 375A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 11880pF @ 25V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK |
8,964 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 3.1mOhm @ 30A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 6500pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 36A TO-247 |
2,286 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 56A TO-247 |
8,388 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 375A DIRECTFET |
7,092 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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ON Semiconductor |
MOSFET N-CH 600V 20A TO-3P |
3,544 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
8,442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | - | 300mOhm @ 7.5A, 10V | 4.5V @ 1mA | 50nC @ 10V | - | 1700pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A 5DFN |
2,376 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | Super Junction | 156W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220AB |
5,778 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 2A TO-220 |
5,094 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.3nC @ 10V | ±20V | 655pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V TO-263 |
5,634 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 900V 8.6A TO-3P |
4,050 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 8.6A (Tc) | 10V | 1.3Ohm @ 4.3A, 10V | 5V @ 250µA | 72nC @ 10V | ±30V | 2700pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 250V 4A TO-220 |
3,744 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 47mOhm @ 50A, 10V | 5V @ 250µA | 101nC @ 10V | ±30V | 5690pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
TRANSISTOR N-CH |
6,696 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
7,182 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH TO220-3 |
6,228 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 208µA | 166nC @ 10V | ±20V | 12100pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO247 |
3,132 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 3A TO-220 |
8,748 |
|
PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A TO-220 |
6,426 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 1mA | 104nC @ 10V | - | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |